Development of a Monolithic Active Pixel Sensor using SOI Technology with a Thick Device Layer

Mervyn Armstrong, Harold Gamble, Fred Ruddell, J. Marczewski, P. Grabiec, K. Kucharski, D. Tomaszewski, W. Kucewicz, T. Kusiak, M. Sapor, B.W. Loster, S. Majewski

Research output: Contribution to journalArticle

7 Citations (Scopus)
Original languageEnglish
Article number5410008
Pages (from-to)381-386
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number1 PART 2
Publication statusPublished - Feb 2010

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Armstrong, M., Gamble, H., Ruddell, F., Marczewski, J., Grabiec, P., Kucharski, K., Tomaszewski, D., Kucewicz, W., Kusiak, T., Sapor, M., Loster, B. W., & Majewski, S. (2010). Development of a Monolithic Active Pixel Sensor using SOI Technology with a Thick Device Layer. IEEE Transactions on Nuclear Science, 57(1 PART 2), 381-386. [5410008].