Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer

Mervyn Armstrong, W. Kucewicz, P. Grabiec, K. Kucharski, J. Marczewski, H. Niemec, M. Sapor, D. Tomaszewski, Fred Ruddell

Research output: Contribution to conferencePaper

3 Citations (Scopus)
Original languageEnglish
Pages1123-1125
Number of pages3
Publication statusPublished - Oct 2008
EventIEEE Nuclear Science Symposium Conference - Dresden, Germany
Duration: 01 Oct 200801 Oct 2008

Conference

ConferenceIEEE Nuclear Science Symposium Conference
CountryGermany
CityDresden
Period01/10/200801/10/2008

Bibliographical note

ISSN: 978-1-4244-2715-4/08

Cite this

Armstrong, M., Kucewicz, W., Grabiec, P., Kucharski, K., Marczewski, J., Niemec, H., Sapor, M., Tomaszewski, D., & Ruddell, F. (2008). Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer. 1123-1125. Paper presented at IEEE Nuclear Science Symposium Conference, Dresden, Germany.