Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer

Mervyn Armstrong; W. Kucewicz; P. Grabiec; K. Kucharski; J. Marczewski; H. Niemec; M. Sapor; D. Tomaszewski; Fred Ruddell

Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer

Mervyn Armstrong, W. Kucewicz, P. Grabiec, K. Kucharski, J. Marczewski, H. Niemec, M. Sapor, D. Tomaszewski, Fred Ruddell

Research output: Contribution to conference › Paper

3 Citations (Scopus)

Original language	English
Pages	1123-1125
Number of pages	3
Publication status	Published - Oct 2008
Event	IEEE Nuclear Science Symposium Conference - Dresden, Germany Duration: 01 Oct 2008 → 01 Oct 2008

Conference

Conference	IEEE Nuclear Science Symposium Conference
Country	Germany
City	Dresden
Period	01/10/2008 → 01/10/2008

Bibliographical note

ISSN: 978-1-4244-2715-4/08

Cite this

Armstrong, M., Kucewicz, W., Grabiec, P., Kucharski, K., Marczewski, J., Niemec, H., Sapor, M., Tomaszewski, D., & Ruddell, F. (2008). Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer. 1123-1125. Paper presented at IEEE Nuclear Science Symposium Conference, Dresden, Germany.

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title = "Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer",

author = "Mervyn Armstrong and W. Kucewicz and P. Grabiec and K. Kucharski and J. Marczewski and H. Niemec and M. Sapor and D. Tomaszewski and Fred Ruddell",

note = "ISSN: 978-1-4244-2715-4/08; IEEE Nuclear Science Symposium Conference ; Conference date: 01-10-2008 Through 01-10-2008",

year = "2008",

month = oct,

language = "English",

pages = "1123--1125",

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Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer. / Armstrong, Mervyn; Kucewicz, W.; Grabiec, P.; Kucharski, K.; Marczewski, J.; Niemec, H.; Sapor, M.; Tomaszewski, D.; Ruddell, Fred.

2008. 1123-1125 Paper presented at IEEE Nuclear Science Symposium Conference, Dresden, Germany.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer

AU - Armstrong, Mervyn

AU - Kucewicz, W.

AU - Grabiec, P.

AU - Kucharski, K.

AU - Marczewski, J.

AU - Niemec, H.

AU - Sapor, M.

AU - Tomaszewski, D.

AU - Ruddell, Fred

N1 - ISSN: 978-1-4244-2715-4/08

PY - 2008/10

Y1 - 2008/10

M3 - Paper

SP - 1123

EP - 1125

T2 - IEEE Nuclear Science Symposium Conference

Y2 - 1 October 2008 through 1 October 2008

ER -