Dielectric screening in atomically thin boron nitride nanosheets

Lu Hua Li, Elton J G Santos, Tan Xing, Emmanuele Cappelluti, Rafael Roldán, Ying Chen, Kenji Watanabe, Takashi Taniguchi

Research output: Chapter in Book/Report/Conference proceedingChapter

82 Citations (Scopus)


Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D nanomaterial-based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration, and nonlinear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.
Original languageEnglish
Title of host publicationNano Letters
PublisherAmerican Chemical Society
Number of pages6
ISBN (Print)1530-6984
Publication statusPublished - 14 Jan 2015

Publication series

NameNano Letters


  • boron nitride nanosheets
  • electric field screening
  • electric force microscopy (EFM)
  • first-principles calculations
  • nonlinear Thomas-Fermi theory

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  • Cite this

    Li, L. H., Santos, E. J. G., Xing, T., Cappelluti, E., Roldán, R., Chen, Y., Watanabe, K., & Taniguchi, T. (2015). Dielectric screening in atomically thin boron nitride nanosheets. In Nano Letters (pp. 218-223). (Nano Letters; Vol. 15). American Chemical Society. https://doi.org/10.1021/nl503411a