Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

D Saladukha, M B Clavel, P Murphy-Armando, G Greene-Diniz, M Gruening, M.K. Hudait, T.J. Ochalski

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

394 Downloads (Pure)

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Finished

R3729TSL: Si-Compatible Strain Engineered Staggered Gap Ge(Sn)/InGa As Non-Scale Tunnel Field Effect Transistors
Grüning, M. & Kohanoff, J.
25/09/2015 → 31/03/2019
Project: Research