Dual-band GaN transistor-based RF-DC rectifier

Zhiwei Zhang, Neil Buchanan, Zhiqun Cheng, Chao Gu, Vincent Fusco

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Abstract

This paper proposes a dual-band high-efficiency RF-DC GaN transistor-based rectifier. The use of GaN transistors gives the rectifier a large power capability. On the basis of the dual-band power amplifier, a dual-band RF-DC rectifier is realized by using the time-reversal duality theory. At the same time, a dual-band phase adjustment network and the input matching network are optimized integrally to realize a self-synchronous rectifier with a more compact and less lossy circuit. The simulation results show that at 2.0 GHz, 2.5 GHz, the rectifier has an efficiency of more than 75% when the input power is 40 dBm and dc load is 50 ohms.
Original languageEnglish
Title of host publicationCross Strait Radio Science and Wireless Technology Conference
Publisher IEEE
Number of pages3
ISBN (Print)978-1-6654-3243-6
DOIs
Publication statusEarly online date - 13 Dec 2021
Event2021 Cross Strait Radio Science and Wireless Technology Conference - Shenzhen, China
Duration: 11 Oct 202113 Oct 2021

Publication series

Name 2021 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC)
PublisherIEEE
ISSN (Electronic)2377-8512

Conference

Conference2021 Cross Strait Radio Science and Wireless Technology Conference
Country/TerritoryChina
CityShenzhen
Period11/10/202113/10/2021

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