Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

Steffan Gwyn; Scott  Watson; Thomas  Slight; Martin  Knapp; Shaun  Viola; Pavlo Ivanov; Weikang  Zhang; Amit  Yadav; Edik  Rafailov; Mohsin  Haji; Kevin E  Doherty; Szymon  Stanczyk; Szymon  Grzanka; Piotr  Perlin; Stephen P  Najda; Mike  Leszczyski; Anthony E  Kelly

doi:10.1109/JPHOT.2020.3045218

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

Steffan Gwyn, Scott Watson, Thomas Slight, Martin Knapp, Shaun Viola, Pavlo Ivanov, Weikang Zhang, Amit Yadav, Edik Rafailov, Mohsin Haji, Kevin E Doherty, Szymon Stanczyk, Szymon Grzanka, Piotr Perlin, Stephen P Najda, Mike Leszczyski, Anthony E Kelly

School of Mathematics and Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

103 Downloads (Pure)

Abstract

We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd -order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors' knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.

Original language	English
Article number	1500510
Journal	IEEE Photonics Journal
Volume	13
Issue number	1
Early online date	16 Dec 2020
DOIs	https://doi.org/10.1109/JPHOT.2020.3045218
Publication status	Published - 01 Feb 2021

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10.1109/JPHOT.2020.3045218Licence: CC BY

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes
Copyright 2020 the authors. This is an open access article published under a Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Final published version, 2.01 MBLicence: CC BY

GaN-based distributed feedback laser diodes and their applications
Gwyn, S. (Author), Kelly, A. (Supervisor) & Bowman, R. (Supervisor), Jul 2022
Student thesis: Doctoral Thesis › Doctor of Philosophy

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Gwyn, S., Watson, S., Slight, T., Knapp, M., Viola, S., Ivanov, P., Zhang, W., Yadav, A., Rafailov, E., Haji, M., Doherty, K. E., Stanczyk, S., Grzanka, S., Perlin, P., Najda, S. P., Leszczyski, M., & Kelly, A. E. (2021). Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes. IEEE Photonics Journal, 13(1), Article 1500510. https://doi.org/10.1109/JPHOT.2020.3045218

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title = "Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes",

abstract = "We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd -order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors' knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.",

author = "Steffan Gwyn and Scott Watson and Thomas Slight and Martin Knapp and Shaun Viola and Pavlo Ivanov and Weikang Zhang and Amit Yadav and Edik Rafailov and Mohsin Haji and Doherty, {Kevin E} and Szymon Stanczyk and Szymon Grzanka and Piotr Perlin and Najda, {Stephen P} and Mike Leszczyski and Kelly, {Anthony E}",

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doi = "10.1109/JPHOT.2020.3045218",

language = "English",

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Gwyn, S, Watson, S, Slight, T, Knapp, M, Viola, S, Ivanov, P, Zhang, W, Yadav, A, Rafailov, E, Haji, M, Doherty, KE, Stanczyk, S, Grzanka, S, Perlin, P, Najda, SP, Leszczyski, M & Kelly, AE 2021, 'Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes', IEEE Photonics Journal, vol. 13, no. 1, 1500510. https://doi.org/10.1109/JPHOT.2020.3045218

TY - JOUR

T1 - Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

AU - Gwyn, Steffan

AU - Watson, Scott

AU - Slight, Thomas

AU - Knapp, Martin

AU - Viola, Shaun

AU - Ivanov, Pavlo

AU - Zhang, Weikang

AU - Yadav, Amit

AU - Rafailov, Edik

AU - Haji, Mohsin

AU - Doherty, Kevin E

AU - Stanczyk, Szymon

AU - Grzanka, Szymon

AU - Perlin, Piotr

AU - Najda, Stephen P

AU - Leszczyski, Mike

AU - Kelly, Anthony E

PY - 2021/2/1

Y1 - 2021/2/1

N2 - We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd -order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors' knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.

AB - We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd -order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors' knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.

U2 - 10.1109/JPHOT.2020.3045218

DO - 10.1109/JPHOT.2020.3045218

M3 - Article

SN - 1943-0647

VL - 13

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 1

M1 - 1500510

ER -

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

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GaN-based distributed feedback laser diodes and their applications

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