Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

Steffan Gwyn, Scott Watson, Thomas Slight, Martin Knapp, Shaun Viola, Pavlo Ivanov, Weikang Zhang, Amit Yadav, Edik Rafailov, Mohsin Haji, Kevin E Doherty, Szymon Stanczyk, Szymon Grzanka, Piotr Perlin, Stephen P Najda, Mike Leszczyski, Anthony E Kelly

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Abstract

We report on the characterization and analysis of a GaN-based distributed feedback laser diode (DFB-LD) with 3 rd -order laterally etched sidewall gratings centered at a wavelength of 420 nm. We also compare the device parameters with two commonly used Fabry-Perot (FP) devices operating at 450 nm and 520 nm. Intrinsic properties of the devices were extracted, including damping factor, carrier and photon lifetimes, modulation efficiency, differential gain, and parasitic capacitance. These parameters showed that the DFB exhibits a lower damping rate and parasitic capacitance while demonstrating a higher modulation efficiency, indicating that the DFB shows good potential for communications applications. Additionally, spectral linewidth of a GaN DFB is reported. To the authors' knowledge, this is the first demonstration of parameter extraction and spectral linewidth measurement for GaN-based DFB-LDs.
Original languageEnglish
Article number1500510
JournalIEEE Photonics Journal
Volume13
Issue number1
Early online date16 Dec 2020
DOIs
Publication statusPublished - 01 Feb 2021

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