TY - JOUR
T1 - Dynamically Reconfigurable SIR Filter Using Rectenna and Active Booster
AU - Quddious, Abdul
AU - Abbasi, Muhammad Ali Babar
AU - Saghir, Aqeela
AU - Arain, Salman
AU - Antoniades, Marco A.
AU - Polycarpou, Alexis
AU - Vryonides, Photos
AU - Nikolaou, Symeon
PY - 2019/1/23
Y1 - 2019/1/23
N2 - A novel dynamically reconfigurable bandpass filter (BPF) employing stepped-impedance resonators (SIRs) that can operate as either a single-band or a dual-band filter is demonstrated. The reconfigurable BPF uses four positive-intrinsic-negative (p-i-n) diodes as switching elements. With the four p-i-n diodes in the ``OFF'' state, the filter behaves as a low-loss (0.85 dB) single-band BPF with a passband around 2.45 GHz. The reconfigurable SIR filter can operate as a dual-band BPF with two center frequencies at 1.6 and 2.45 GHz. The diodes are dynamically set to the ``ON'' state in the presence of a 1.6-GHz RF signal that is received by an RF triggered power management unit (PMU), integrated on the back side of the microstrip filter in a dual-layer architecture. The RF triggered PMU consists of a planar inverted-F antenna, a high-efficiency voltage doubler rectifier (47% at -13 dBm) and an active dc-to-dc power booster. The rectified output voltage is used as the enabling voltage for the dc-to-dc power booster. This, in turn, provides the required dc power for the diodes biasing. The filter switches from single-band to dual-band when a wireless input RF signal (>-13 dBm) is received by the RF triggered PMU antenna.
AB - A novel dynamically reconfigurable bandpass filter (BPF) employing stepped-impedance resonators (SIRs) that can operate as either a single-band or a dual-band filter is demonstrated. The reconfigurable BPF uses four positive-intrinsic-negative (p-i-n) diodes as switching elements. With the four p-i-n diodes in the ``OFF'' state, the filter behaves as a low-loss (0.85 dB) single-band BPF with a passband around 2.45 GHz. The reconfigurable SIR filter can operate as a dual-band BPF with two center frequencies at 1.6 and 2.45 GHz. The diodes are dynamically set to the ``ON'' state in the presence of a 1.6-GHz RF signal that is received by an RF triggered power management unit (PMU), integrated on the back side of the microstrip filter in a dual-layer architecture. The RF triggered PMU consists of a planar inverted-F antenna, a high-efficiency voltage doubler rectifier (47% at -13 dBm) and an active dc-to-dc power booster. The rectified output voltage is used as the enabling voltage for the dc-to-dc power booster. This, in turn, provides the required dc power for the diodes biasing. The filter switches from single-band to dual-band when a wireless input RF signal (>-13 dBm) is received by the RF triggered PMU antenna.
U2 - 10.1109/TMTT.2019.2891524
DO - 10.1109/TMTT.2019.2891524
M3 - Article
VL - 67
SP - 1504
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
SN - 0018-9480
IS - 4
ER -