Effect of boron incorporation on the luminescence and structural properties of B xAl yGa 1-x-yN/AlGaN MQWs for UV emitters

Thomas O'Connor*, Vitaly Zubialevich, Praveen Kumar, Miryam Arredondo-Arechavala, Stefan Schulz, Peter Parbrook

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As we reduce the emission wavelength of III-Nitride materials, and delve deeper into the UV region, the struggle to keep the material at a high internal quantum efficiency escalates. A reduction in the quantum confined Stark effect and an improvement in strain engineering are just two of the challenges that wurtzite boron nitride (wz-BN) could play a key role in. In this presentation, we investigate the possibility of incorporating wz-BN into ternary and quaternary multiple quantum wells serving as the active region for UV emitters. This work was funded by Science Foundation Ireland (IPIC and PIADs.)
Original languageEnglish
Title of host publicationProceedings of SPIE: Gallium Nitride Materials and Devices XVIII (2023)
EditorsHiroshi Fujioka, Hadis Morkoç, Ulrich T. Schwarz
VolumePC12421
Publication statusPublished - 21 Mar 2023
EventSPIE OPTO 2023 - San Francisco, United States
Duration: 27 Jan 202301 Feb 2023
https://www.tradefairdates.com/SPIE+Opto-M3661/San+Francisco.html

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSPIE OPTO 2023
Country/TerritoryUnited States
CitySan Francisco
Period27/01/202301/02/2023
Internet address

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