Effect of material properties on stress-induced defect generation in trenched SOI

W.A. Nevin, K. Somasundram, S. Blackstone, S. Magee, Anthony Paxton

Research output: Contribution to conferencePaper

Original languageEnglish
Pages524-531
Number of pages8
Publication statusPublished - Oct 2000
Event6th Symposium on High Purity Silicon held at the 198th Meeting of the Electrochemical-Society - Phoenix Arizona, United States
Duration: 01 Oct 200001 Oct 2000

Conference

Conference6th Symposium on High Purity Silicon held at the 198th Meeting of the Electrochemical-Society
CountryUnited States
CityPhoenix Arizona
Period01/10/200001/10/2000

Cite this

Nevin, W. A., Somasundram, K., Blackstone, S., Magee, S., & Paxton, A. (2000). Effect of material properties on stress-induced defect generation in trenched SOI. 524-531. Paper presented at 6th Symposium on High Purity Silicon held at the 198th Meeting of the Electrochemical-Society, Phoenix Arizona, United States.
Nevin, W.A. ; Somasundram, K. ; Blackstone, S. ; Magee, S. ; Paxton, Anthony. / Effect of material properties on stress-induced defect generation in trenched SOI. Paper presented at 6th Symposium on High Purity Silicon held at the 198th Meeting of the Electrochemical-Society, Phoenix Arizona, United States.8 p.
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note = "6th Symposium on High Purity Silicon held at the 198th Meeting of the Electrochemical-Society ; Conference date: 01-10-2000 Through 01-10-2000",

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Nevin, WA, Somasundram, K, Blackstone, S, Magee, S & Paxton, A 2000, 'Effect of material properties on stress-induced defect generation in trenched SOI', Paper presented at 6th Symposium on High Purity Silicon held at the 198th Meeting of the Electrochemical-Society, Phoenix Arizona, United States, 01/10/2000 - 01/10/2000 pp. 524-531.

Effect of material properties on stress-induced defect generation in trenched SOI. / Nevin, W.A.; Somasundram, K.; Blackstone, S.; Magee, S.; Paxton, Anthony.

2000. 524-531 Paper presented at 6th Symposium on High Purity Silicon held at the 198th Meeting of the Electrochemical-Society, Phoenix Arizona, United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Effect of material properties on stress-induced defect generation in trenched SOI

AU - Nevin, W.A.

AU - Somasundram, K.

AU - Blackstone, S.

AU - Magee, S.

AU - Paxton, Anthony

PY - 2000/10

Y1 - 2000/10

UR - http://www.scopus.com/inward/record.url?scp=0034446750&partnerID=8YFLogxK

M3 - Paper

SP - 524

EP - 531

ER -

Nevin WA, Somasundram K, Blackstone S, Magee S, Paxton A. Effect of material properties on stress-induced defect generation in trenched SOI. 2000. Paper presented at 6th Symposium on High Purity Silicon held at the 198th Meeting of the Electrochemical-Society, Phoenix Arizona, United States.