Effect of nitridation on Al/HfO2/Ge MIS capacitors

B.J. Kailath, Sekhar Bhattacharya, A. DasGupta, N. DasGupta, David McNeill, Harold Gamble

Research output: Contribution to conferencePaper

Original languageEnglish
Pages194-197
Number of pages4
Publication statusPublished - Dec 2007
EventProceedings of 14th International Workshop on the Physics of Semiconductor Devices - Mumbai, India
Duration: 01 Dec 200701 Dec 2007

Conference

ConferenceProceedings of 14th International Workshop on the Physics of Semiconductor Devices
CountryIndia
CityMumbai
Period01/12/200701/12/2007

Cite this

Kailath, B. J., Bhattacharya, S., DasGupta, A., DasGupta, N., McNeill, D., & Gamble, H. (2007). Effect of nitridation on Al/HfO2/Ge MIS capacitors. 194-197. Paper presented at Proceedings of 14th International Workshop on the Physics of Semiconductor Devices, Mumbai, India.