Effect of nitridation on Al/HfO2/Ge MIS capacitors

B.J. Kailath, Sekhar Bhattacharya, A. DasGupta, N. DasGupta, David McNeill, Harold Gamble

Research output: Contribution to conference › Paper

Original language	English
Pages	194-197
Number of pages	4
Publication status	Published - Dec 2007
Event	Proceedings of 14th International Workshop on the Physics of Semiconductor Devices - Mumbai, India Duration: 01 Dec 2007 → 01 Dec 2007

Conference	Proceedings of 14th International Workshop on the Physics of Semiconductor Devices
Country/Territory	India
City	Mumbai
Period	01/12/2007 → 01/12/2007

Cite this

@conference{176ef0d4e1574642ac40fd826cb26b11,

title = "Effect of nitridation on Al/HfO2/Ge MIS capacitors",

author = "B.J. Kailath and Sekhar Bhattacharya and A. DasGupta and N. DasGupta and David McNeill and Harold Gamble",

year = "2007",

month = dec,

language = "English",

pages = "194--197",

note = "Proceedings of 14th International Workshop on the Physics of Semiconductor Devices ; Conference date: 01-12-2007 Through 01-12-2007",

}

TY - CONF

T1 - Effect of nitridation on Al/HfO2/Ge MIS capacitors

AU - Kailath, B.J.

AU - Bhattacharya, Sekhar

AU - DasGupta, A.

AU - DasGupta, N.

AU - McNeill, David

AU - Gamble, Harold

PY - 2007/12

Y1 - 2007/12

UR - http://www.scopus.com/inward/record.url?scp=49749129260&partnerID=8YFLogxK

M3 - Paper

SP - 194

EP - 197

T2 - Proceedings of 14th International Workshop on the Physics of Semiconductor Devices

Y2 - 1 December 2007 through 1 December 2007

ER -