Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors

A. Sellai; Paul Dawson

doi:10.1016/j.jcrysgro.2005.12.029

Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors

A. Sellai, Paul Dawson

Research output: Contribution to conference › Paper

Original language	English
Pages	166-170
Number of pages	5
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.029
Publication status	Published - Jul 2006
Event	3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials - Singapore, Singapore Duration: 01 Jul 2006 → 01 Jul 2006

Conference

Conference	3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials
Country/Territory	Singapore
City	Singapore
Period	01/07/2006 → 01/07/2006

Access to Document

10.1016/j.jcrysgro.2005.12.029

Cite this

@conference{66afbcfbdcfe404bacaba248a9ed6a4e,

title = "Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors",

author = "A. Sellai and Paul Dawson",

year = "2006",

month = jul,

doi = "10.1016/j.jcrysgro.2005.12.029",

language = "English",

pages = "166--170",

note = "3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials ; Conference date: 01-07-2006 Through 01-07-2006",

}

TY - CONF

T1 - Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors

AU - Sellai, A.

AU - Dawson, Paul

PY - 2006/7

Y1 - 2006/7

U2 - 10.1016/j.jcrysgro.2005.12.029

DO - 10.1016/j.jcrysgro.2005.12.029

M3 - Paper

SP - 166

EP - 170

T2 - 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials

Y2 - 1 July 2006 through 1 July 2006

ER -