Abstract
An efficient 0.6–4.2 GHz GaN-HEMT power amplifier based on Klopfenstein taper is proposed in this letter. A method based on source-pull/load-pull simulation has been used to find the optimum source and load impedances across the broad band. Then the Klopfenstein taper is studied and adopted for the output matching circuit design to achieve broadband performance. The measured results show that our proposed power amplifier has a fractional bandwidth of 150%, with saturated output power ranging from 39.45 to 42.32 dBm, power added efficiency from 45.1% to 64.8%, and over 9 dB gain at the whole working band of 0.6–4.2 GHz. The fabricated power amplifier can cover most of the wireless communication frequency bands.
Original language | English |
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Pages (from-to) | 103-109 |
Number of pages | 7 |
Journal | Progress in Electromagnetics Research Letters |
Volume | 105 |
DOIs | |
Publication status | Published - 01 Aug 2022 |
Bibliographical note
Funding Information:This work was supported in part by the National Natural Science Foundation of China (Grant No. 61801317), in part by the Sichuan Science and Technology Program: Provincial Overseas Cooperation (Grant No. 2022YFH0097), in part by the State Key Laboratory of Millimeter Waves (Grant No.K202206) and in part by the Fundamental Research Funds of Shaanxi Key Laboratory of Artificially-Structured Functional Materials and Devices (Grant number: AFMD-KFJJ-21202).
Publisher Copyright:
© 2022, Electromagnetics Academy. All rights reserved.
Keywords
- Power Amplifier
- Klopfenstein Taper
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials