Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

Shahjahan Murad, Paul Baine, John Montgomery, David McNeill, Neil Mitchell, Mervyn Armstrong, Mircea Modreanu

Research output: Contribution to journalArticle

LanguageEnglish
Pages137-144
Number of pages8
JournalECS Transactions
Volume45
Issue number3
Publication statusPublished - Apr 2012

Cite this

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title = "Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs",
author = "Shahjahan Murad and Paul Baine and John Montgomery and David McNeill and Neil Mitchell and Mervyn Armstrong and Mircea Modreanu",
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journal = "ECS Transactions",
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Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs. / Murad, Shahjahan; Baine, Paul; Montgomery, John; McNeill, David; Mitchell, Neil; Armstrong, Mervyn; Modreanu, Mircea.

In: ECS Transactions, Vol. 45, No. 3, 04.2012, p. 137-144.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

AU - Murad, Shahjahan

AU - Baine, Paul

AU - Montgomery, John

AU - McNeill, David

AU - Mitchell, Neil

AU - Armstrong, Mervyn

AU - Modreanu, Mircea

PY - 2012/4

Y1 - 2012/4

M3 - Article

VL - 45

SP - 137

EP - 144

JO - ECS Transactions

T2 - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 3

ER -