Abstract
This paper presents the electrical characterisation of germanium stripe resistors produced by Physical Vapour Deposition using a Rapid Melt Growth process with either single or multiple micro-crucible materials. Electrical measurement of single germanium stripe resistors were obtained using a Greek cross test structure whereas four-terminal aluminium rail test structures were used for germanium stripe arrays. The electrical characterisation was conducted under dark conditions. Results showed only a slight reduction in germanium sheet resistance compared to that of as-deposited material even after a high temperature (980 °C) crystal growth process. It is believed that the measurements were compromised by contact and leakage current issues. As a result, the electrical characteristics of crystallised germanium could not be investigated properly and the relationship to Raman measurement was not established.
| Original language | English |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Publisher | AIP Publishing |
| Number of pages | 7 |
| Volume | 2030 |
| Edition | 1 |
| ISBN (Print) | 978-0-7354-1752-6 |
| DOIs | |
| Publication status | Published - 12 Nov 2018 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Publisher | AIP |
| Volume | 2030 |
| ISSN (Print) | 0094-243X |
| ISSN (Electronic) | 1551-7616 |
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Cite this
Zainal, N., Mitchell, S. J. N., & McNeill, D. W. (2018). Electrical characterisation of PVD germanium resistors with rapid melt growth (RMG) process. In AIP Conference Proceedings (1 ed., Vol. 2030). [020109] (AIP Conference Proceedings; Vol. 2030). AIP Publishing. https://doi.org/10.1063/1.5066750