Electrical characterisation of PVD germanium resistors with rapid melt growth (RMG) process

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Abstract

This paper presents the electrical characterisation of germanium stripe resistors produced by Physical Vapour Deposition using a Rapid Melt Growth process with either single or multiple micro-crucible materials. Electrical measurement of single germanium stripe resistors were obtained using a Greek cross test structure whereas four-terminal aluminium rail test structures were used for germanium stripe arrays. The electrical characterisation was conducted under dark conditions. Results showed only a slight reduction in germanium sheet resistance compared to that of as-deposited material even after a high temperature (980 °C) crystal growth process. It is believed that the measurements were compromised by contact and leakage current issues. As a result, the electrical characteristics of crystallised germanium could not be investigated properly and the relationship to Raman measurement was not established.
Original languageEnglish
Title of host publicationAIP Conference Proceedings
PublisherAIP Publishing
Number of pages7
Volume2030
Edition1
ISBN (Print)978-0-7354-1752-6
DOIs
Publication statusPublished - 12 Nov 2018

Publication series

NameAIP Conference Proceedings
PublisherAIP
Volume2030
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

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Zainal, N., Mitchell, S. J. N., & McNeill, D. W. (2018). Electrical characterisation of PVD germanium resistors with rapid melt growth (RMG) process. In AIP Conference Proceedings (1 ed., Vol. 2030). [020109] (AIP Conference Proceedings; Vol. 2030). AIP Publishing. https://doi.org/10.1063/1.5066750