Electrical characterization of ALD Al2O3 and HfO2 films on germanium

D. Tantraviwat, Yee Low, Paul Baine, Neil Mitchell, David McNeill, Mervyn Armstrong, Harold Gamble

Research output: Contribution to journalArticle

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Abstract

Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al 2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO 2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure. ©The Electrochemical Society.
LanguageEnglish
Pages201-207
Number of pages7
JournalECS Transactions
Volume28
Issue number1
DOIs
Publication statusPublished - 2010

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Atomic layer deposition
Germanium
Capacitors
Degradation
MOS capacitors
Nitridation
Metals
Densification
Leakage currents
Hysteresis
Current density
Nitrogen
Plasmas
Electrodes
Oxides
Substrates
Temperature

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Tantraviwat, D. ; Low, Yee ; Baine, Paul ; Mitchell, Neil ; McNeill, David ; Armstrong, Mervyn ; Gamble, Harold. / Electrical characterization of ALD Al2O3 and HfO2 films on germanium. In: ECS Transactions. 2010 ; Vol. 28, No. 1. pp. 201-207.
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abstract = "Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al 2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO 2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure. {\circledC}The Electrochemical Society.",
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Electrical characterization of ALD Al2O3 and HfO2 films on germanium. / Tantraviwat, D.; Low, Yee; Baine, Paul; Mitchell, Neil; McNeill, David; Armstrong, Mervyn; Gamble, Harold.

In: ECS Transactions, Vol. 28, No. 1, 2010, p. 201-207.

Research output: Contribution to journalArticle

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AU - Tantraviwat, D.

AU - Low, Yee

AU - Baine, Paul

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AU - McNeill, David

AU - Armstrong, Mervyn

AU - Gamble, Harold

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N2 - Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al 2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO 2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure. ©The Electrochemical Society.

AB - Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al 2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO 2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure. ©The Electrochemical Society.

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