This paper shows that penetration of the applied electric field into the electrodes of a ferroelectric thin film capacitor produces both an interfacial capacitance and an effective mechanism for electron tunneling. The model predictions are compared with experimental results on Au-BST-SrRuO3 capacitors of varying thicknesses, and the agreement is excellent.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Dawber, M., Sinnamon, L. J., Scott, J. F., & Gregg, M. (2002). Electrode field penetration: A new interpretation of tunneling currents in barium strontium titanate (BST) thin films. Ferroelectrics, 268, 455-460. https://doi.org/10.1080/0015019022011783