In this paper, we report calculations of energy levels, radiative rates and electron impact excitation rates for transitions in Li-like Si XII, He-like Si XIII and H-like Si XIV. The grasp (general-purpose relativistic atomic structure package) is adopted for calculating energy levels and radiative rates, while for determining the collision strengths and subsequently the excitation rates, the Dirac atomic R-matrix code (darc) is used. Oscillator strengths, radiative rates and line strengths are reported for all E1, E2, M1 and M2 transitions among the lowest 24 levels of Si XII, 49 levels of Si XIII and 25 levels of Si XIV, belonging to the n≤5 configurations. Collision strengths have been averaged over a Maxwellian electron velocity distribution and the effective collision strengths so obtained are reported over a wide temperature range below 107 K. Comparisons have been made with similar data obtained from the flexible atomic code (fac) to highlight the importance of resonances, included in calculations from darc, in the determination of effective collision strengths. Discrepancies between the collision strengths from darc and fac, particularly for weak transitions and at low energies, are also discussed. Additionally, lifetimes are listed for all calculated levels of the above three ions, although no measurements are available with which to compare.
Aggarwal, K. M., & Keenan, F. P. (2010). Energy levels, radiative rates and electron impact excitation rates for transitions in Si XII, Si XIII and Si XIV. Physica Scripta, 82, 1-20. . https://doi.org/10.1088/0031-8949/82/06/065302