Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics

Chul Ho Lee; Theanne Schiros; Elton J G Santos; Bumjung Kim; Kevin G. Yager; Seok Ju Kang; Sunwoo Lee; Jaeeun Yu; Kenji Watanabe; Takashi Taniguchi; James Hone; Efthimios Kaxiras; Colin Nuckolls; Philip Kim

doi:10.1002/adma.201304973

Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics

Chul Ho Lee, Theanne Schiros, Elton J G Santos, Bumjung Kim, Kevin G. Yager, Seok Ju Kang, Sunwoo Lee, Jaeeun Yu, Kenji Watanabe, Takashi Taniguchi, James Hone, Efthimios Kaxiras, Colin Nuckolls, Philip Kim

School of Mathematics and Physics

Research output: Contribution to journal › Article › peer-review

137 Citations (Scopus)

Abstract

Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.

Original language	English
Pages (from-to)	2812-2817
Number of pages	6
Journal	Advanced Materials
Volume	26
Issue number	18
Early online date	23 Jan 2014
DOIs	https://doi.org/10.1002/adma.201304973
Publication status	Published - 08 May 2014

Keywords

hexagonal boron nitride (h-BN)
organic semiconductors organic field-effect transistors
rubrene
van der Waals heterostructures

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10.1002/adma.201304973

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title = "Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics",

abstract = "Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.",

keywords = "hexagonal boron nitride (h-BN), organic semiconductors organic field-effect transistors, rubrene, van der Waals heterostructures",

author = "Lee, {Chul Ho} and Theanne Schiros and Santos, {Elton J G} and Bumjung Kim and Yager, {Kevin G.} and Kang, {Seok Ju} and Sunwoo Lee and Jaeeun Yu and Kenji Watanabe and Takashi Taniguchi and James Hone and Efthimios Kaxiras and Colin Nuckolls and Philip Kim",

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doi = "10.1002/adma.201304973",

language = "English",

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T1 - Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics

AU - Lee, Chul Ho

AU - Schiros, Theanne

AU - Santos, Elton J G

AU - Kim, Bumjung

AU - Yager, Kevin G.

AU - Kang, Seok Ju

AU - Lee, Sunwoo

AU - Yu, Jaeeun

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Hone, James

AU - Kaxiras, Efthimios

AU - Nuckolls, Colin

AU - Kim, Philip

PY - 2014/5/8

Y1 - 2014/5/8

N2 - Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.

AB - Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.

KW - hexagonal boron nitride (h-BN)

KW - organic semiconductors organic field-effect transistors

KW - rubrene

KW - van der Waals heterostructures

U2 - 10.1002/adma.201304973

DO - 10.1002/adma.201304973

M3 - Article

C2 - 24458727

SN - 0935-9648

VL - 26

SP - 2812

EP - 2817

JO - Advanced Materials

JF - Advanced Materials

IS - 18

ER -

Epitaxial growth of molecular crystals on van der Waals substrates for high-performance organic electronics

Abstract

Keywords

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