Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates

Alina Visinoiu; Ho Nyung Lee; S Senz; Alain Pignolet; Dietrich Hesse; Ulrich Gosele

Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates

Alina Visinoiu, Ho Nyung Lee, S Senz, Alain Pignolet, Dietrich Hesse, Ulrich Gosele

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well defined orientation relations, viz. SBT(116)\\ SrRuO3(110)\\ YSZ(100)\\ Si(100), SBT[110]\\ SrRuO3[001], and SrRuO3[111]\\ YSZ[110]\\ Si[110].

Original language	English
Pages (from-to)	101
Journal	Applied Physics A - Materials Science & Processing
Volume	71
Issue number	1
Publication status	Published - Jul 2000

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@article{cf73ee70ad3e4d1f8419704beab84866,

title = "Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates",

abstract = "Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well defined orientation relations, viz. SBT(116)\\ SrRuO3(110)\\ YSZ(100)\\ Si(100), SBT[110]\\ SrRuO3[001], and SrRuO3[111]\\ YSZ[110]\\ Si[110].",

author = "Alina Visinoiu and Lee, {Ho Nyung} and S Senz and Alain Pignolet and Dietrich Hesse and Ulrich Gosele",

year = "2000",

month = jul,

language = "English",

volume = "71",

pages = "101",

journal = "Applied Physics A - Materials Science & Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "1",

}

TY - JOUR

T1 - Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates

AU - Visinoiu, Alina

AU - Lee, Ho Nyung

AU - Senz, S

AU - Pignolet, Alain

AU - Hesse, Dietrich

AU - Gosele, Ulrich

PY - 2000/7

Y1 - 2000/7

N2 - Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well defined orientation relations, viz. SBT(116)\\ SrRuO3(110)\\ YSZ(100)\\ Si(100), SBT[110]\\ SrRuO3[001], and SrRuO3[111]\\ YSZ[110]\\ Si[110].

AB - Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well defined orientation relations, viz. SBT(116)\\ SrRuO3(110)\\ YSZ(100)\\ Si(100), SBT[110]\\ SrRuO3[001], and SrRuO3[111]\\ YSZ[110]\\ Si[110].

M3 - Article

SN - 0947-8396

VL - 71

SP - 101

JO - Applied Physics A - Materials Science & Processing

JF - Applied Physics A - Materials Science & Processing

IS - 1

ER -

Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates

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