Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates

Alina Visinoiu, Ho Nyung Lee, S Senz, Alain Pignolet, Dietrich Hesse, Ulrich Gosele

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35 Citations (Scopus)

Abstract

Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well defined orientation relations, viz. SBT(116)\\ SrRuO3(110)\\ YSZ(100)\\ Si(100), SBT[110]\\ SrRuO3[001], and SrRuO3[111]\\ YSZ[110]\\ Si[110].
Original languageEnglish
Pages (from-to)101
JournalApplied Physics A - Materials Science & Processing
Volume71
Issue number1
Publication statusPublished - Jul 2000

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    Visinoiu, A., Lee, H. N., Senz, S., Pignolet, A., Hesse, D., & Gosele, U. (2000). Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates. Applied Physics A - Materials Science & Processing, 71(1), 101.