Equivalent Circuit Model for Thermal Resistance of Deep Trench Isolated Bipolar Transistors

R Rashmi, Alastair Armstrong, Catriona Harrington, A. Bousquet, S. Nigrin

Research output: Contribution to conference › Paper

Original language	English
Pages	261-264
Number of pages	4
Publication status	Published - Oct 2010
Event	Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Austin, Tx, United States Duration: 01 Oct 2010 → 01 Oct 2010

Conference	Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Country/Territory	United States
City	Austin, Tx
Period	01/10/2010 → 01/10/2010

Cite this

@conference{014317238a804dc5a32bf76667edd18c,

title = "Equivalent Circuit Model for Thermal Resistance of Deep Trench Isolated Bipolar Transistors",

author = "R Rashmi and Alastair Armstrong and Catriona Harrington and A. Bousquet and S. Nigrin",

year = "2010",

month = oct,

language = "English",

pages = "261--264",

note = "Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ; Conference date: 01-10-2010 Through 01-10-2010",

}

TY - CONF

T1 - Equivalent Circuit Model for Thermal Resistance of Deep Trench Isolated Bipolar Transistors

AU - Rashmi, R

AU - Armstrong, Alastair

AU - Harrington, Catriona

AU - Bousquet, A.

AU - Nigrin, S.

PY - 2010/10

Y1 - 2010/10

M3 - Paper

SP - 261

EP - 264

T2 - Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

Y2 - 1 October 2010 through 1 October 2010

ER -