This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.
|Publication status||Published - 09 Sep 2012|
|Event||23rd Micromechanics and Microsystems Europe - Ilmenau, Germany|
Duration: 09 Sep 2012 → …
|Conference||23rd Micromechanics and Microsystems Europe|
|Period||09/09/2012 → …|
Tan, T., McNeill, D., Baine, P., Montgomery, J., Mitchell, N., Wadsworth, H., Strahan, S., & Bailie, I. (2012). Evaluation of the piezoresistance properties of p-type silicon. Poster session presented at 23rd Micromechanics and Microsystems Europe, Ilmenau, Germany.