Evaluation of the piezoresistance properties of p-type silicon

Teng Tan; David McNeill; Paul Baine; John Montgomery; Neil Mitchell; Haydn Wadsworth; Sam Strahan; Ivan Bailie

Evaluation of the piezoresistance properties of p-type silicon

Teng Tan, David McNeill, Paul Baine, John Montgomery, Neil Mitchell, Haydn Wadsworth, Sam Strahan, Ivan Bailie

Research output: Contribution to conference › Poster

Abstract

This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.

Original language	English
Publication status	Published - 09 Sep 2012
Event	23rd Micromechanics and Microsystems Europe - Ilmenau, Germany Duration: 09 Sep 2012 → …

Conference

Conference	23rd Micromechanics and Microsystems Europe
Country	Germany
City	Ilmenau
Period	09/09/2012 → …

Fingerprint Dive into the research topics of 'Evaluation of the piezoresistance properties of p-type silicon'. Together they form a unique fingerprint.

Cite this

@conference{4346f03f6143467b8546be2f7dd1a0d0,

title = "Evaluation of the piezoresistance properties of p-type silicon",

abstract = "This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.",

author = "Teng Tan and David McNeill and Paul Baine and John Montgomery and Neil Mitchell and Haydn Wadsworth and Sam Strahan and Ivan Bailie",

year = "2012",

month = sep,

day = "9",

language = "English",

note = "23rd Micromechanics and Microsystems Europe ; Conference date: 09-09-2012",

}

TY - CONF

T1 - Evaluation of the piezoresistance properties of p-type silicon

AU - Tan, Teng

AU - McNeill, David

AU - Baine, Paul

AU - Montgomery, John

AU - Mitchell, Neil

AU - Wadsworth, Haydn

AU - Strahan, Sam

AU - Bailie, Ivan

PY - 2012/9/9

Y1 - 2012/9/9

N2 - This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.

AB - This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.

M3 - Poster

T2 - 23rd Micromechanics and Microsystems Europe

Y2 - 9 September 2012

ER -