Research output: Contribution to conference › Poster
Abstract
This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.
title = "Evaluation of the piezoresistance properties of p-type silicon",
abstract = "This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.",
author = "Teng Tan and David McNeill and Paul Baine and John Montgomery and Neil Mitchell and Haydn Wadsworth and Sam Strahan and Ivan Bailie",
year = "2012",
month = "9",
day = "9",
language = "English",
note = "23rd Micromechanics and Microsystems Europe ; Conference date: 09-09-2012",
2012. Poster session presented at 23rd Micromechanics and Microsystems Europe, Ilmenau, Germany.
Research output: Contribution to conference › Poster
TY - CONF
T1 - Evaluation of the piezoresistance properties of p-type silicon
AU - Tan, Teng
AU - McNeill, David
AU - Baine, Paul
AU - Montgomery, John
AU - Mitchell, Neil
AU - Wadsworth, Haydn
AU - Strahan, Sam
AU - Bailie, Ivan
PY - 2012/9/9
Y1 - 2012/9/9
N2 - This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.
AB - This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.