Abstract
This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.
| Original language | English |
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| Publication status | Published - 09 Sep 2012 |
| Event | 23rd Micromechanics and Microsystems Europe - Ilmenau, Germany Duration: 09 Sep 2012 → … |
Conference
| Conference | 23rd Micromechanics and Microsystems Europe |
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| Country | Germany |
| City | Ilmenau |
| Period | 09/09/2012 → … |
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Cite this
Tan, T., McNeill, D., Baine, P., Montgomery, J., Mitchell, N., Wadsworth, H., Strahan, S., & Bailie, I. (2012). Evaluation of the piezoresistance properties of p-type silicon. Poster session presented at 23rd Micromechanics and Microsystems Europe, Ilmenau, Germany.