Extrinsic parameter extraction and RF modelling of CMOS

Research output: Contribution to journalArticle

5 Citations (Scopus)


An analytical approach for CMOS parameter extraction which includes the effect of parasitic resistance is presented. The method is based on small-signal equivalent circuit valid in all region of operation to uniquely extract extrinsic resistances, which can be used to extend the industry standard BSIM3v3 MOSFET model for radio frequency applications. The verification of the model was carried out through frequency domain measurements of S-parameters and direct time domain measurement at 2.4 GHz in a large signal non-linear mode of operation. (C) 2003 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)669-674
Number of pages6
Issue number5
Publication statusPublished - May 2004

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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