Fabrication of SOI substrates with buried tungsten silicide layer by smart-cut technique

Suli Suder, Richard Hurley, Michael Bain, Paul Baine, David McNeill, Mervyn Armstrong, Harold Gamble

Research output: Contribution to conferencePaper

1 Citation (Scopus)
Original languageEnglish
Pages279-282
Number of pages4
Publication statusPublished - Sep 2001
EventProceedings of 9th International Symposium on Integrated Circuits, Devices & Systems, ISIC-2001 - Singapore, Singapore
Duration: 01 Sep 200101 Sep 2001

Conference

ConferenceProceedings of 9th International Symposium on Integrated Circuits, Devices & Systems, ISIC-2001
CountrySingapore
CitySingapore
Period01/09/200101/09/2001

Cite this

Suder, S., Hurley, R., Bain, M., Baine, P., McNeill, D., Armstrong, M., & Gamble, H. (2001). Fabrication of SOI substrates with buried tungsten silicide layer by smart-cut technique. 279-282. Paper presented at Proceedings of 9th International Symposium on Integrated Circuits, Devices & Systems, ISIC-2001, Singapore, Singapore.