This paper reports the fabrication of SSOI (Silicon on Silicide On Insulator) substrates with active silicon regions only 0.5mum thick, incorporating LPCVD low resistivity tungsten silicide (WSix) as the buried layer. The substrates were produced using ion splitting and two stages of wafer bonding. Scanning acoustic microscope imaging confirmed that the bond interfaces are essentially void-free. These SSOI wafers are designed to be employed as substrates for mm-wave reflect-array diodes, and the required selective etch technology is described together with details of a suitable device.
|Title of host publication||SEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS|
|Number of pages||6|
|Publication status||Published - Sep 2003|
|Event||Electrochemical Society Proc, v 19, Semiconductor Wafer Bonding VII: Science, Technology, & Applications - Paris, France|
Duration: 01 Sep 2003 → 01 Sep 2003
|Conference||Electrochemical Society Proc, v 19, Semiconductor Wafer Bonding VII: Science, Technology, & Applications|
|Period||01/09/2003 → 01/09/2003|