Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies

Frederick Ruddell, Michael Bain, Suli Suder, Richard Hurley, Mervyn Armstrong, Vincent Fusco, Harold Gamble

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports the fabrication of SSOI (Silicon on Silicide On Insulator) substrates with active silicon regions only 0.5mum thick, incorporating LPCVD low resistivity tungsten silicide (WSix) as the buried layer. The substrates were produced using ion splitting and two stages of wafer bonding. Scanning acoustic microscope imaging confirmed that the bond interfaces are essentially void-free. These SSOI wafers are designed to be employed as substrates for mm-wave reflect-array diodes, and the required selective etch technology is described together with details of a suitable device.
Original languageEnglish
Title of host publicationSEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS
Pages25-30
Number of pages6
Volume2003
Publication statusPublished - Sep 2003
EventElectrochemical Society Proc, v 19, Semiconductor Wafer Bonding VII: Science, Technology, & Applications - Paris, France
Duration: 01 Sep 200301 Sep 2003

Conference

ConferenceElectrochemical Society Proc, v 19, Semiconductor Wafer Bonding VII: Science, Technology, & Applications
CountryFrance
CityParis
Period01/09/200301/09/2003

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  • Cite this

    Ruddell, F., Bain, M., Suder, S., Hurley, R., Armstrong, M., Fusco, V., & Gamble, H. (2003). Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies. In SEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS (Vol. 2003, pp. 25-30)