Abstract
Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al2O3 interfacial layer (∼2.8 nm). For diodes with an Al2O3 interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO2 interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.
Original language | English |
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Article number | 012102 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 1 |
Early online date | 02 Jan 2014 |
DOIs | |
Publication status | Published - 06 Jan 2014 |
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Profiles
-
David McNeill
- School of Electronics, Electrical Engineering and Computer Science - Senior Lecturer
- Wireless Communication Systems
Person: Academic