Ferroelectric Domain Wall Memristor

James P. V. McConville, Haidong Lu, Bo Wang, Yueze Tan, Charlotte Cochard, Michele Conroy, Alan Harvey, Ursel Bangert, Long-Qing Chen, Alexei Gruverman, J. Marty Gregg*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

83 Citations (Scopus)
184 Downloads (Pure)


We have created a domain wall-enabled memristor, in thin film lithium niobate capacitors, that shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric-field pulse, used to induce switching, alters the extent to which polarisation reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this “domain wall memristor” demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.
Original languageEnglish
Article number2000109
Number of pages8
JournalAdvanced Functional Materials
Publication statusPublished - 13 May 2020


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