Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

J. Muller; T.S. Boscke; S. Muller; E. Yurchuk; P. Polakowski; J. Paul; D. Martin; T. Schenk; K. Khullar; A Kersch; W. Weinreich; S. Riedel; K. Seidel; A Kumar; T.M. Arruda; S.V. Kalinin; T. Schlosser; R. Boschke; R. van Bentum; U. Schroder; T. Mikolajick

doi:10.1109/IEDM.2013.6724605

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

J. Muller, T.S. Boscke, S. Muller, E. Yurchuk, P. Polakowski, J. Paul, D. Martin, T. Schenk, K. Khullar, A Kersch, W. Weinreich, S. Riedel, K. Seidel, A Kumar, T.M. Arruda, S.V. Kalinin, T. Schlosser, R. Boschke, R. van Bentum, U. SchroderT. Mikolajick

School of Mathematics and Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

349 Citations (Scopus)

Abstract

With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.

Original language	English
Title of host publication	Electron Devices Meeting (IEDM), 2013 IEEE International
Pages	10.8.1-10.8.4
DOIs	https://doi.org/10.1109/IEDM.2013.6724605
Publication status	Published - 01 Dec 2013

Keywords

CMOS digital integrated circuits
ferroelectric storage
field effect transistors
hafnium compounds
random-access storage
CMOS-environment
HfO2
MFIS-FET
MFM capacitors
NVM properties
ferroelectric memories
perovskite based FRAM
thin films
Capacitors
Ferroelectric films
Hafnium compounds
Logic gates
Nonvolatile memory
Random access memory
Tin

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10.1109/IEDM.2013.6724605

Cite this

Muller, J., Boscke, T. S., Muller, S., Yurchuk, E., Polakowski, P., Paul, J., Martin, D., Schenk, T., Khullar, K., Kersch, A., Weinreich, W., Riedel, S., Seidel, K., Kumar, A., Arruda, T. M., Kalinin, S. V., Schlosser, T., Boschke, R., van Bentum, R., ... Mikolajick, T. (2013). Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories. In Electron Devices Meeting (IEDM), 2013 IEEE International (pp. 10.8.1-10.8.4) https://doi.org/10.1109/IEDM.2013.6724605

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title = "Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories",

abstract = "With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.",

keywords = "CMOS digital integrated circuits, ferroelectric storage, field effect transistors, hafnium compounds, random-access storage, CMOS-environment, HfO2, MFIS-FET, MFM capacitors, NVM properties, ferroelectric memories, perovskite based FRAM, thin films, Capacitors, Ferroelectric films, Hafnium compounds, Logic gates, Nonvolatile memory, Random access memory, Tin",

author = "J. Muller and T.S. Boscke and S. Muller and E. Yurchuk and P. Polakowski and J. Paul and D. Martin and T. Schenk and K. Khullar and A Kersch and W. Weinreich and S. Riedel and K. Seidel and A Kumar and T.M. Arruda and S.V. Kalinin and T. Schlosser and R. Boschke and {van Bentum}, R. and U. Schroder and T. Mikolajick",

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doi = "10.1109/IEDM.2013.6724605",

language = "English",

pages = "10.8.1--10.8.4",

booktitle = "Electron Devices Meeting (IEDM), 2013 IEEE International",

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Muller, J, Boscke, TS, Muller, S, Yurchuk, E, Polakowski, P, Paul, J, Martin, D, Schenk, T, Khullar, K, Kersch, A, Weinreich, W, Riedel, S, Seidel, K, Kumar, A, Arruda, TM, Kalinin, SV, Schlosser, T, Boschke, R, van Bentum, R, Schroder, U & Mikolajick, T 2013, Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories. in Electron Devices Meeting (IEDM), 2013 IEEE International. pp. 10.8.1-10.8.4. https://doi.org/10.1109/IEDM.2013.6724605

TY - GEN

T1 - Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

AU - Muller, J.

AU - Boscke, T.S.

AU - Muller, S.

AU - Yurchuk, E.

AU - Polakowski, P.

AU - Paul, J.

AU - Martin, D.

AU - Schenk, T.

AU - Khullar, K.

AU - Kersch, A

AU - Weinreich, W.

AU - Riedel, S.

AU - Seidel, K.

AU - Kumar, A

AU - Arruda, T.M.

AU - Kalinin, S.V.

AU - Schlosser, T.

AU - Boschke, R.

AU - van Bentum, R.

AU - Schroder, U.

AU - Mikolajick, T.

PY - 2013/12/1

Y1 - 2013/12/1

N2 - With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.

AB - With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.

KW - CMOS digital integrated circuits

KW - ferroelectric storage

KW - field effect transistors

KW - hafnium compounds

KW - random-access storage

KW - CMOS-environment

KW - HfO2

KW - MFIS-FET

KW - MFM capacitors

KW - NVM properties

KW - ferroelectric memories

KW - perovskite based FRAM

KW - thin films

KW - Capacitors

KW - Ferroelectric films

KW - Hafnium compounds

KW - Logic gates

KW - Nonvolatile memory

KW - Random access memory

KW - Tin

U2 - 10.1109/IEDM.2013.6724605

DO - 10.1109/IEDM.2013.6724605

M3 - Conference contribution

SP - 10.8.1-10.8.4

BT - Electron Devices Meeting (IEDM), 2013 IEEE International

ER -

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

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Keywords

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