Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

J. Muller, T.S. Boscke, S. Muller, E. Yurchuk, P. Polakowski, J. Paul, D. Martin, T. Schenk, K. Khullar, A Kersch, W. Weinreich, S. Riedel, K. Seidel, A Kumar, T.M. Arruda, S.V. Kalinin, T. Schlosser, R. Boschke, R. van Bentum, U. SchroderT. Mikolajick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

119 Citations (Scopus)

Abstract

With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.
Original languageEnglish
Title of host publicationElectron Devices Meeting (IEDM), 2013 IEEE International
Pages10.8.1-10.8.4
DOIs
Publication statusPublished - 01 Dec 2013

Keywords

  • CMOS digital integrated circuits
  • ferroelectric storage
  • field effect transistors
  • hafnium compounds
  • random-access storage
  • CMOS-environment
  • HfO2
  • MFIS-FET
  • MFM capacitors
  • NVM properties
  • ferroelectric memories
  • perovskite based FRAM
  • thin films
  • Capacitors
  • Ferroelectric films
  • Hafnium compounds
  • Logic gates
  • Nonvolatile memory
  • Random access memory
  • Tin

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