Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric

Dominik Martin, Johannes Müller, Tony Schenk, Thomas M. Arruda, Amit Kumar, Evgheni Strelcov, Ekaterina Yurchuk, Stefan Müller, Darius Pohl, Uwe Schröder, Sergei V. Kalinin, Thomas Mikolajick

Research output: Contribution to journalArticlepeer-review

109 Citations (Scopus)

Abstract

Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.
Original languageEnglish
Pages (from-to)8198-8202
Number of pages5
JournalAdvanced Materials
Volume26
Issue number48
Early online date28 Oct 2014
DOIs
Publication statusPublished - 23 Dec 2014

Keywords

  • HfO2
  • Si-doping
  • ferroelectricity
  • antiferroelectricity
  • electromechanical response mechanisms
  • piezoresponse force microscopy (PFM)

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