Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric

Dominik Martin; Johannes Müller; Tony Schenk; Thomas M. Arruda; Amit Kumar; Evgheni Strelcov; Ekaterina Yurchuk; Stefan Müller; Darius Pohl; Uwe Schröder; Sergei V. Kalinin; Thomas Mikolajick

doi:10.1002/adma.201403115

Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric

Dominik Martin, Johannes Müller, Tony Schenk, Thomas M. Arruda, Amit Kumar, Evgheni Strelcov, Ekaterina Yurchuk, Stefan Müller, Darius Pohl, Uwe Schröder, Sergei V. Kalinin, Thomas Mikolajick

School of Mathematics and Physics

Research output: Contribution to journal › Article › peer-review

164 Citations (Scopus)

Abstract

Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.

Original language	English
Pages (from-to)	8198-8202
Number of pages	5
Journal	Advanced Materials
Volume	26
Issue number	48
Early online date	28 Oct 2014
DOIs	https://doi.org/10.1002/adma.201403115
Publication status	Published - 23 Dec 2014

Keywords

HfO2
Si-doping
ferroelectricity
antiferroelectricity
electromechanical response mechanisms
piezoresponse force microscopy (PFM)

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10.1002/adma.201403115

Amit Kumar
- a.kumarqub.acuk
- School of Mathematics and Physics - Reader
- Centre for Quantum Materials and Technologies (CQMT)
Person: Academic

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title = "Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric",

abstract = "Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior. ",

keywords = "HfO2, Si-doping, ferroelectricity, antiferroelectricity, electromechanical response mechanisms, piezoresponse force microscopy (PFM)",

author = "Dominik Martin and Johannes M{\"u}ller and Tony Schenk and Arruda, \{Thomas M.\} and Amit Kumar and Evgheni Strelcov and Ekaterina Yurchuk and Stefan M{\"u}ller and Darius Pohl and Uwe Schr{\"o}der and Kalinin, \{Sergei V.\} and Thomas Mikolajick",

year = "2014",

month = dec,

day = "23",

doi = "10.1002/adma.201403115",

language = "English",

volume = "26",

pages = "8198--8202",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "48",

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TY - JOUR

T1 - Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric

AU - Martin, Dominik

AU - Müller, Johannes

AU - Schenk, Tony

AU - Arruda, Thomas M.

AU - Kumar, Amit

AU - Strelcov, Evgheni

AU - Yurchuk, Ekaterina

AU - Müller, Stefan

AU - Pohl, Darius

AU - Schröder, Uwe

AU - Kalinin, Sergei V.

AU - Mikolajick, Thomas

PY - 2014/12/23

Y1 - 2014/12/23

N2 - Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.

AB - Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.

KW - HfO2

KW - Si-doping

KW - ferroelectricity

KW - antiferroelectricity

KW - electromechanical response mechanisms

KW - piezoresponse force microscopy (PFM)

U2 - 10.1002/adma.201403115

DO - 10.1002/adma.201403115

M3 - Article

SN - 0935-9648

VL - 26

SP - 8198

EP - 8202

JO - Advanced Materials

JF - Advanced Materials

IS - 48

ER -

Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric

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