Few-layer, large-area, 2D covalent organic framework semiconductor thin films.

Jeremy I Feldblyum; Clara H McCreery; Sean C Andrews; Tadanori Kurosawa; Elton J G Santos; Vincent Duong; Lei Fang; Alexander L Ayzner; Zhenan Bao

doi:10.1039/c5cc04679c

Few-layer, large-area, 2D covalent organic framework semiconductor thin films.

Jeremy I Feldblyum, Clara H McCreery, Sean C Andrews, Tadanori Kurosawa, Elton J G Santos, Vincent Duong, Lei Fang, Alexander L Ayzner, Zhenan Bao

School of Mathematics and Physics

Research output: Contribution to journal › Article

109 Citations (Scopus)

Abstract

In this work, we synthesize large-area thin films of a conjugated, imine-based, two-dimensional covalent organic framework at the solution/air interface. Thicknesses between ∼2-200 nm are achieved. Films can be transferred to any desired substrate by lifting from underneath, enabling their use as the semiconducting active layer in field-effect transistors.

Original language	English
Pages (from-to)	13894-13897
Number of pages	4
Journal	Chemical Communications
Volume	51
Issue number	73
Early online date	03 Aug 2015
DOIs	https://doi.org/10.1039/c5cc04679c
Publication status	Published - 2015

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Feldblyum, J. I., McCreery, C. H., Andrews, S. C., Kurosawa, T., Santos, E. J. G., Duong, V., Fang, L., Ayzner, A. L., & Bao, Z. (2015). Few-layer, large-area, 2D covalent organic framework semiconductor thin films. Chemical Communications, 51(73), 13894-13897. https://doi.org/10.1039/c5cc04679c

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AU - Feldblyum, Jeremy I

AU - McCreery, Clara H

AU - Andrews, Sean C

AU - Kurosawa, Tadanori

AU - Santos, Elton J G

AU - Duong, Vincent

AU - Fang, Lei

AU - Ayzner, Alexander L

AU - Bao, Zhenan

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AB - In this work, we synthesize large-area thin films of a conjugated, imine-based, two-dimensional covalent organic framework at the solution/air interface. Thicknesses between ∼2-200 nm are achieved. Films can be transferred to any desired substrate by lifting from underneath, enabling their use as the semiconducting active layer in field-effect transistors.

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DO - 10.1039/c5cc04679c

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JO - Chemical Communications

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