GaN Nanowire Schottky Barrier Diodes

Gourab Sabui, Vitaly Z. Zubialevich, Mary White, Pietro Pampili, Peter J. Parbrook, Mathew McLaren, Miryam Arredondo-Arechavala, Z. John Shen

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)
550 Downloads (Pure)

Abstract

A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) structures and the principle of dielectric REduced SURface Field (RESURF) is proposed in this paper. High-threading dislocation density in GaN epitaxy grown on foreign substrates has hindered the development and commercialization of vertical GaN power devices. The proposed NW structure, previously explored for LEDs offers an opportunity to reduce defect density and fabricate low cost vertical GaN power devices on silicon (Si) substrates. In this paper, we investigate the static characteristics of high-voltage GaN NW Schottky diodes using 3-D TCAD device simulation. The NW architecture theoretically achieves blocking voltages upward of 700 V with very low specific on-resistance. Two different methods of device fabrication are discussed. Preliminary experimental results are reported on device samples fabricated using one of the proposed methods. The fabricated Schottky diodes exhibit a breakdown voltage of around 100 V and no signs of current collapse. Although more work is needed to further explore the nano-GaN concept, the preliminary results indicate that superior tradeoff between the breakdown voltage and specific on-resistance can be achieved, all on a vertical architecture and a foreign substrate. The proposed NW approach has the potential to deliver low cost reliable GaN power devices, circumventing the limitations of today's high electron mobility transistors (HEMTs) technology and vertical GaN on GaN devices.

Original languageEnglish
JournalIEEE Transactions on Electron Devices
Volume64
Issue number5
Early online date21 Mar 2017
DOIs
Publication statusPublished - May 2017

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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