Gate dielectrics on strained-Ge layers on Si(1-x)/Ge( x)/Si virtual substrates

Mervyn Armstrong, Harold Gamble

Research output: Contribution to conferencePaper

3 Citations (Scopus)
Original languageEnglish
Pages48-49
Number of pages2
Publication statusPublished - Nov 2003
EventExtended Abstracts of Intl Workshop on Gate Insulator (IEEE Cat. No.03EX765), 2003, p 48-9 - Tokyo, Japan
Duration: 01 Nov 200301 Nov 2003

Conference

ConferenceExtended Abstracts of Intl Workshop on Gate Insulator (IEEE Cat. No.03EX765), 2003, p 48-9
CountryJapan
CityTokyo
Period01/11/200301/11/2003

Cite this

Armstrong, M., & Gamble, H. (2003). Gate dielectrics on strained-Ge layers on Si(1-x)/Ge( x)/Si virtual substrates. 48-49. Paper presented at Extended Abstracts of Intl Workshop on Gate Insulator (IEEE Cat. No.03EX765), 2003, p 48-9, Tokyo, Japan.