Gate dielectrics on strained-Ge layers on Si(1-x)/Ge( x)/Si virtual substrates

Research output: Contribution to conference › Paper

Original language	English
Pages	48-49
Number of pages	2
Publication status	Published - Nov 2003
Event	Extended Abstracts of Intl Workshop on Gate Insulator (IEEE Cat. No.03EX765), 2003, p 48-9 - Tokyo, Japan Duration: 01 Nov 2003 → 01 Nov 2003

Conference	Extended Abstracts of Intl Workshop on Gate Insulator (IEEE Cat. No.03EX765), 2003, p 48-9
Country/Territory	Japan
City	Tokyo
Period	01/11/2003 → 01/11/2003

Cite this

@conference{b9bf4fe3f6ae48229bbf44b9643969a9,

title = "Gate dielectrics on strained-Ge layers on Si(1-x)/Ge( x)/Si virtual substrates",

author = "Mervyn Armstrong and Harold Gamble",

year = "2003",

month = nov,

language = "English",

pages = "48--49",

note = "Extended Abstracts of Intl Workshop on Gate Insulator (IEEE Cat. No.03EX765), 2003, p 48-9 ; Conference date: 01-11-2003 Through 01-11-2003",

}