Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

P.J. McNally, J. Kanatharana, B.H.W. Toh, David McNeill, A.N. Danilewsky, T. Tuomi, L. Knuuttila, J. Riikonen, J. Toivonen, R. Simon

Research output: Contribution to journalArticle

10 Citations (Scopus)
LanguageEnglish
Article number7
Pages7596-7602
Number of pages7
JournalJournal of Applied Physics
Volume96(12)
Issue number12
DOIs
Publication statusPublished - 15 Dec 2004

Cite this

McNally, P.J. ; Kanatharana, J. ; Toh, B.H.W. ; McNeill, David ; Danilewsky, A.N. ; Tuomi, T. ; Knuuttila, L. ; Riikonen, J. ; Toivonen, J. ; Simon, R. / Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. In: Journal of Applied Physics. 2004 ; Vol. 96(12), No. 12. pp. 7596-7602.
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McNally, PJ, Kanatharana, J, Toh, BHW, McNeill, D, Danilewsky, AN, Tuomi, T, Knuuttila, L, Riikonen, J, Toivonen, J & Simon, R 2004, 'Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology', Journal of Applied Physics, vol. 96(12), no. 12, 7, pp. 7596-7602. https://doi.org/10.1063/1.1811780

Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. / McNally, P.J.; Kanatharana, J.; Toh, B.H.W.; McNeill, David; Danilewsky, A.N.; Tuomi, T.; Knuuttila, L.; Riikonen, J.; Toivonen, J.; Simon, R.

In: Journal of Applied Physics, Vol. 96(12), No. 12, 7, 15.12.2004, p. 7596-7602.

Research output: Contribution to journalArticle

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AU - McNally, P.J.

AU - Kanatharana, J.

AU - Toh, B.H.W.

AU - McNeill, David

AU - Danilewsky, A.N.

AU - Tuomi, T.

AU - Knuuttila, L.

AU - Riikonen, J.

AU - Toivonen, J.

AU - Simon, R.

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JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

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