Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

P.J. McNally; J. Kanatharana; B.H.W. Toh; David McNeill; A.N. Danilewsky; T. Tuomi; L. Knuuttila; J. Riikonen; J. Toivonen; R. Simon

doi:10.1063/1.1811780

Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

P.J. McNally
, J. Kanatharana
, B.H.W. Toh
, David McNeill
, A.N. Danilewsky
, T. Tuomi
, L. Knuuttila
, J. Riikonen
, J. Toivonen
, R. Simon

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	7
Pages (from-to)	7596-7602
Number of pages	7
Journal	Journal of Applied Physics
Volume	96(12)
Issue number	12
DOIs	https://doi.org/10.1063/1.1811780
Publication status	Published - 15 Dec 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
General Physics and Astronomy

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10.1063/1.1811780

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McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D., Danilewsky, A. N., Tuomi, T., Knuuttila, L., Riikonen, J., Toivonen, J., & Simon, R. (2004). Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. Journal of Applied Physics, 96(12)(12), 7596-7602. Article 7. https://doi.org/10.1063/1.1811780

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title = "Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology",

author = "P.J. McNally and J. Kanatharana and B.H.W. Toh and David McNeill and A.N. Danilewsky and T. Tuomi and L. Knuuttila and J. Riikonen and J. Toivonen and R. Simon",

year = "2004",

month = dec,

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doi = "10.1063/1.1811780",

language = "English",

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McNally, PJ, Kanatharana, J, Toh, BHW, McNeill, D, Danilewsky, AN, Tuomi, T, Knuuttila, L, Riikonen, J, Toivonen, J & Simon, R 2004, 'Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology', Journal of Applied Physics, vol. 96(12), no. 12, 7, pp. 7596-7602. https://doi.org/10.1063/1.1811780

Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. / McNally, P.J.; Kanatharana, J.; Toh, B.H.W. et al.
In: Journal of Applied Physics, Vol. 96(12), No. 12, 7, 15.12.2004, p. 7596-7602.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

AU - McNally, P.J.

AU - Kanatharana, J.

AU - Toh, B.H.W.

AU - McNeill, David

AU - Danilewsky, A.N.

AU - Tuomi, T.

AU - Knuuttila, L.

AU - Riikonen, J.

AU - Toivonen, J.

AU - Simon, R.

PY - 2004/12/15

Y1 - 2004/12/15

UR - https://www.scopus.com/pages/publications/19944365181

U2 - 10.1063/1.1811780

DO - 10.1063/1.1811780

M3 - Article

SN - 0021-8979

VL - 96(12)

SP - 7596

EP - 7602

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 7

ER -

Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

ASJC Scopus subject areas

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