Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

Mervyn Armstrong; Harold Gamble; David McNeill; Frederick Ruddell; Haydn Wadsworth

Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

Mervyn Armstrong, Harold Gamble, David McNeill, Frederick Ruddell, Haydn Wadsworth

Research output: Contribution to conference › Paper

Original language	English
Pages	0-0
Number of pages	1
Publication status	Published - May 2006
Event	E-MRS Spring Meeting 2006 Symp T (Germanium based semiconductors from materials to devices) - Nice, France Duration: 01 May 2006 → 01 May 2006

Conference

Conference	E-MRS Spring Meeting 2006 Symp T (Germanium based semiconductors from materials to devices)
Country/Territory	France
City	Nice
Period	01/05/2006 → 01/05/2006

Cite this

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title = "Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics",

author = "Mervyn Armstrong and Harold Gamble and David McNeill and Frederick Ruddell and Haydn Wadsworth",

year = "2006",

month = may,

language = "English",

pages = "0--0",

note = "E-MRS Spring Meeting 2006 Symp T (Germanium based semiconductors from materials to devices) ; Conference date: 01-05-2006 Through 01-05-2006",

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TY - CONF

T1 - Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

AU - Armstrong, Mervyn

AU - Gamble, Harold

AU - McNeill, David

AU - Ruddell, Frederick

AU - Wadsworth, Haydn

PY - 2006/5

Y1 - 2006/5

UR - https://www.scopus.com/pages/publications/33845338480

M3 - Paper

SP - 0

EP - 0

T2 - E-MRS Spring Meeting 2006 Symp T (Germanium based semiconductors from materials to devices)

Y2 - 1 May 2006 through 1 May 2006

ER -

Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

Conference

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Cite this