Giant Resistive Switching in Mixed Phase BiFeO3 via phase population control

David Edwards, Niall Browne, Kristina M. Holsgrove, Aaron B. Naden, Sayed O. Sayedaghaee, Bin Xu, Sergey Prosandeev, Dawei wang, Dipanjan Mazumdar, Martial Duchamp, Arunava Gupta, Sergei V. Kalinin, Miryam Arredondo-Arechavala, Raymond G. P. McQuaid, Laurent Bellaiche, J. Marty Gregg, Amit Kumar

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Abstract

Highly-strained coherent interfaces, between Rhombohedral-like (R) and Tetragonal-like (T) phases in BiFeO3 thin films, often show enhanced electrical conductivity in comparison to non-interfacial regions. In principle, changing the population and distribution of these interfaces should therefore allow different resistance states to be created. However, doing this controllably has been challenging to date. Here, we show that local thin film phase microstructures (and hence R-T interface densities) can be changed in a thermodynamically predictable way (predictions made using atomistic simulations) by applying different combinations of mechanical stress and electric field. We use both pressure and electric field to reversibly generate metastable changes in microstructure that result in very large changes of resistance of up to 10^8 %, comparable to those seen in Tunnelling Electro-Resistance (TER) devices.
Original languageEnglish
Pages (from-to)1-9
JournalNanoscale
Issue number37
Early online date03 Sep 2018
DOIs
Publication statusPublished - 07 Oct 2018

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Keywords

  • phase competition
  • resistive switching
  • localized stress
  • ferroelectrics

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