Giant Resistive Switching in Mixed Phase BiFeO3 via phase population control

David Edwards; Niall Browne; Kristina M. Holsgrove; Aaron B. Naden; Sayed O. Sayedaghaee; Bin Xu; Sergey  Prosandeev; Dawei wang; Dipanjan Mazumdar; Martial Duchamp; Arunava Gupta; Sergei V. Kalinin; Miryam Arredondo-Arechavala; Raymond G. P. McQuaid; Laurent Bellaiche; J. Marty Gregg; Amit Kumar

doi:10.1039/C8NR03653E

Giant Resistive Switching in Mixed Phase BiFeO3 via phase population control

David Edwards, Niall Browne, Kristina M. Holsgrove, Aaron B. Naden, Sayed O. Sayedaghaee, Bin Xu, Sergey Prosandeev, Dawei wang, Dipanjan Mazumdar, Martial Duchamp, Arunava Gupta, Sergei V. Kalinin, Miryam Arredondo-Arechavala, Raymond G. P. McQuaid, Laurent Bellaiche, J. Marty Gregg, Amit Kumar

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Abstract

Highly-strained coherent interfaces, between Rhombohedral-like (R) and Tetragonal-like (T) phases in BiFeO3 thin films, often show enhanced electrical conductivity in comparison to non-interfacial regions. In principle, changing the population and distribution of these interfaces should therefore allow different resistance states to be created. However, doing this controllably has been challenging to date. Here, we show that local thin film phase microstructures (and hence R-T interface densities) can be changed in a thermodynamically predictable way (predictions made using atomistic simulations) by applying different combinations of mechanical stress and electric field. We use both pressure and electric field to reversibly generate metastable changes in microstructure that result in very large changes of resistance of up to 10^8 %, comparable to those seen in Tunnelling Electro-Resistance (TER) devices.

Original language	English
Pages (from-to)	1-9
Journal	Nanoscale
Issue number	37
Early online date	03 Sep 2018
DOIs	https://doi.org/10.1039/C8NR03653E
Publication status	Published - 07 Oct 2018

Keywords

phase competition
resistive switching
localized stress
ferroelectrics

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10.1039/C8NR03653ELicence: CC BY

Giant resistive switching in mixed phase BiFeO3via phase population control
Copyright 2018 the authors. This is an open access article published under a Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Final published version, 3.88 MBLicence: CC BY

Amit Kumar
- a.kumarqub.acuk
- School of Mathematics and Physics - Senior Lecturer
Person: Academic

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Edwards, D., Browne, N., Holsgrove, K. M., Naden, A. B., Sayedaghaee, S. O., Xu, B., Prosandeev, S., wang, D., Mazumdar, D., Duchamp, M., Gupta, A., Kalinin, S. V., Arredondo-Arechavala, M., McQuaid, R. G. P., Bellaiche, L., Gregg, J. M., & Kumar, A. (2018). Giant Resistive Switching in Mixed Phase BiFeO3 via phase population control. Nanoscale, (37), 1-9. https://doi.org/10.1039/C8NR03653E

Edwards, David ; Browne, Niall ; Holsgrove, Kristina M. ; Naden, Aaron B. ; Sayedaghaee, Sayed O. ; Xu, Bin ; Prosandeev, Sergey ; wang, Dawei ; Mazumdar, Dipanjan ; Duchamp, Martial ; Gupta, Arunava ; Kalinin, Sergei V. ; Arredondo-Arechavala, Miryam ; McQuaid, Raymond G. P. ; Bellaiche, Laurent ; Gregg, J. Marty ; Kumar, Amit. / Giant Resistive Switching in Mixed Phase BiFeO3 via phase population control. In: Nanoscale. 2018 ; No. 37. pp. 1-9.

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title = "Giant Resistive Switching in Mixed Phase BiFeO3 via phase population control",

abstract = "Highly-strained coherent interfaces, between Rhombohedral-like (R) and Tetragonal-like (T) phases in BiFeO3 thin films, often show enhanced electrical conductivity in comparison to non-interfacial regions. In principle, changing the population and distribution of these interfaces should therefore allow different resistance states to be created. However, doing this controllably has been challenging to date. Here, we show that local thin film phase microstructures (and hence R-T interface densities) can be changed in a thermodynamically predictable way (predictions made using atomistic simulations) by applying different combinations of mechanical stress and electric field. We use both pressure and electric field to reversibly generate metastable changes in microstructure that result in very large changes of resistance of up to 10^8 %, comparable to those seen in Tunnelling Electro-Resistance (TER) devices.",

keywords = "phase competition, resistive switching, localized stress, ferroelectrics",

author = "David Edwards and Niall Browne and Holsgrove, {Kristina M.} and Naden, {Aaron B.} and Sayedaghaee, {Sayed O.} and Bin Xu and Sergey Prosandeev and Dawei wang and Dipanjan Mazumdar and Martial Duchamp and Arunava Gupta and Kalinin, {Sergei V.} and Miryam Arredondo-Arechavala and McQuaid, {Raymond G. P.} and Laurent Bellaiche and Gregg, {J. Marty} and Amit Kumar",

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doi = "10.1039/C8NR03653E",

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issn = "2040-3364",

publisher = "Royal Society of Chemistry",

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Giant Resistive Switching in Mixed Phase BiFeO3 via phase population control. / Edwards, David; Browne, Niall; Holsgrove, Kristina M.; Naden, Aaron B.; Sayedaghaee, Sayed O.; Xu, Bin; Prosandeev, Sergey ; wang, Dawei; Mazumdar, Dipanjan; Duchamp, Martial; Gupta, Arunava; Kalinin, Sergei V.; Arredondo-Arechavala, Miryam ; McQuaid, Raymond G. P.; Bellaiche, Laurent; Gregg, J. Marty ; Kumar, Amit.

In: Nanoscale, No. 37, 07.10.2018, p. 1-9.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Giant Resistive Switching in Mixed Phase BiFeO3 via phase population control

AU - Edwards, David

AU - Browne, Niall

AU - Holsgrove, Kristina M.

AU - Naden, Aaron B.

AU - Sayedaghaee, Sayed O.

AU - Xu, Bin

AU - Prosandeev, Sergey

AU - wang, Dawei

AU - Mazumdar, Dipanjan

AU - Duchamp, Martial

AU - Gupta, Arunava

AU - Kalinin, Sergei V.

AU - Arredondo-Arechavala, Miryam

AU - McQuaid, Raymond G. P.

AU - Bellaiche, Laurent

AU - Gregg, J. Marty

AU - Kumar, Amit

PY - 2018/10/7

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N2 - Highly-strained coherent interfaces, between Rhombohedral-like (R) and Tetragonal-like (T) phases in BiFeO3 thin films, often show enhanced electrical conductivity in comparison to non-interfacial regions. In principle, changing the population and distribution of these interfaces should therefore allow different resistance states to be created. However, doing this controllably has been challenging to date. Here, we show that local thin film phase microstructures (and hence R-T interface densities) can be changed in a thermodynamically predictable way (predictions made using atomistic simulations) by applying different combinations of mechanical stress and electric field. We use both pressure and electric field to reversibly generate metastable changes in microstructure that result in very large changes of resistance of up to 10^8 %, comparable to those seen in Tunnelling Electro-Resistance (TER) devices.

AB - Highly-strained coherent interfaces, between Rhombohedral-like (R) and Tetragonal-like (T) phases in BiFeO3 thin films, often show enhanced electrical conductivity in comparison to non-interfacial regions. In principle, changing the population and distribution of these interfaces should therefore allow different resistance states to be created. However, doing this controllably has been challenging to date. Here, we show that local thin film phase microstructures (and hence R-T interface densities) can be changed in a thermodynamically predictable way (predictions made using atomistic simulations) by applying different combinations of mechanical stress and electric field. We use both pressure and electric field to reversibly generate metastable changes in microstructure that result in very large changes of resistance of up to 10^8 %, comparable to those seen in Tunnelling Electro-Resistance (TER) devices.

KW - phase competition

KW - resistive switching

KW - localized stress

KW - ferroelectrics

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DO - 10.1039/C8NR03653E

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JO - Nanoscale - Royal Society of Chemistry

JF - Nanoscale - Royal Society of Chemistry

SN - 2040-3364

IS - 37

ER -

Giant Resistive Switching in Mixed Phase BiFeO3 via phase population control

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