Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon

D. Sands, K.M. Brunson, D.M. Spink, C.B. Thomas, David McNeill, A.A. McDonald, S. Jennings, P.J. Rosser

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	16-20
Number of pages	5
Journal	Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena)
Volume	8(1)
Publication status	Published - Feb 1990

Cite this

@article{694f081da12d42c3b3050b82cfa4d340,

title = "Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon",

author = "D. Sands and K.M. Brunson and D.M. Spink and C.B. Thomas and David McNeill and A.A. McDonald and S. Jennings and P.J. Rosser",

year = "1990",

month = feb,

language = "English",

volume = "8(1)",

pages = "16--20",

journal = "Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena)",

issn = "0734-211X",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon

AU - Sands, D.

AU - Brunson, K.M.

AU - Spink, D.M.

AU - Thomas, C.B.

AU - McNeill, David

AU - McDonald, A.A.

AU - Jennings, S.

AU - Rosser, P.J.

PY - 1990/2

Y1 - 1990/2

M3 - Article

VL - 8(1)

SP - 16

EP - 20

JO - Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena)

JF - Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena)

SN - 0734-211X

ER -