Hall Effect in Charged Conducting Ferroelectric Domain Walls

Michael Campbell, J. P. V. McConville, R. G. P. McQuaid, D. Prabhakaran, A. Kumar, J. M. Gregg

Research output: Contribution to journalArticle

27 Citations (Scopus)
306 Downloads (Pure)

Abstract

Enhanced conductivity at specific domain walls in ferroelectrics is now an established phenomenon. Surprisingly, however, little is known about the most fundamental aspects of conduction. Carrier types, densities and mobilities have not been determined and transport mechanisms are still a matter of guesswork. Here we demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall Effect in conducting domain walls. Studying YbMnO3 single crystals, we have confirmed that p-type conduction occurs in tail-to-tail charged domain walls. By calibration of the AFM signal, an upper estimate of ~ 1x1016 cm-3 is calculated for the mobile carrier density in the wall, around four orders of magnitude below that required for complete screening of the polar discontinuity. A carrier mobility of ~ 50 cm2V-1s-1 is calculated, about an order of magnitude below equivalent carrier mobilities in p-type silicon, but sufficiently high to preclude carrier-lattice coupling associated with small polarons.
Original languageEnglish
Article number13764
Number of pages6
JournalNature Communications
Volume7
DOIs
Publication statusPublished - 12 Dec 2016

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  • Student Theses

    Hall Potential Mapping of Conducting Ferroelectric Domain Walls

    Author: Campbell, M., Sep 2017

    Supervisor: Gregg, J. (Supervisor) & Kumar, A. (Supervisor)

    Student thesis: Doctoral ThesisDoctor of Philosophy

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