High-k ZrO2 gate dielectric on strained-Si

Mervyn Armstrong, Harold Gamble

Research output: Contribution to conferencePaper

Original languageEnglish
Pages259-164
Number of pages96
Publication statusPublished - Dec 2003
EventFundamentals of Novel Oxide/Semiconductor Interfaces Symp (Mater. Res. Soc. Symp Proceedings Vol.786) pp 159-164, 2004 - Boston, United States
Duration: 01 Dec 200301 Dec 2003

Conference

ConferenceFundamentals of Novel Oxide/Semiconductor Interfaces Symp (Mater. Res. Soc. Symp Proceedings Vol.786) pp 159-164, 2004
CountryUnited States
CityBoston
Period01/12/200301/12/2003

Cite this

Armstrong, M., & Gamble, H. (2003). High-k ZrO2 gate dielectric on strained-Si. 259-164. Paper presented at Fundamentals of Novel Oxide/Semiconductor Interfaces Symp (Mater. Res. Soc. Symp Proceedings Vol.786) pp 159-164, 2004, Boston, United States.