High-k ZrO2 gate dielectric on strained-Si

Mervyn Armstrong; Harold Gamble

High-k ZrO2 gate dielectric on strained-Si

School of Electronics, Electrical Engineering and Computer Science

Research output: Contribution to conference › Paper

Original language	English
Pages	259-164
Number of pages	96
Publication status	Published - Dec 2003
Event	Fundamentals of Novel Oxide/Semiconductor Interfaces Symp (Mater. Res. Soc. Symp Proceedings Vol.786) pp 159-164, 2004 - Boston, United States Duration: 01 Dec 2003 → 01 Dec 2003

Conference

Conference	Fundamentals of Novel Oxide/Semiconductor Interfaces Symp (Mater. Res. Soc. Symp Proceedings Vol.786) pp 159-164, 2004
Country/Territory	United States
City	Boston
Period	01/12/2003 → 01/12/2003

Cite this

@conference{0a527b3be6b84714bbb58a05cab1d514,

title = "High-k ZrO2 gate dielectric on strained-Si",

author = "Mervyn Armstrong and Harold Gamble",

year = "2003",

month = dec,

language = "English",

pages = "259--164",

note = "Fundamentals of Novel Oxide/Semiconductor Interfaces Symp (Mater. Res. Soc. Symp Proceedings Vol.786) pp 159-164, 2004 ; Conference date: 01-12-2003 Through 01-12-2003",

}