High-Performance WSe2 CMOS Technology and Integrated Circuits.

Lili Yu, Ahmad Zubair, Elton J G Santos, Xu Zhang, Yuxuan Lin, Yuhao Zhang, Tomás Palacios

Research output: Contribution to journalArticle

123 Citations (Scopus)

Abstract

Because of their extraordinary structural and electrical properties, two dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (~38) and small static power (Pico-Watts), paving the way for low power electronic system in 2D materials.
Original languageEnglish
Pages (from-to)4928-4934
Number of pages7
JournalNano Letters
Volume15
Issue number8
DOIs
Publication statusPublished - 20 Jul 2015

Keywords

  • 2d
  • air stable doping
  • and transition metal dichalcoge-
  • cmos electronics
  • complementary logic
  • crystals
  • hexagonal boron nitride
  • including graphene
  • integrated circuits
  • low power electronics
  • transition metal dichalcogenides
  • wo-dimensional

Fingerprint Dive into the research topics of 'High-Performance WSe2 CMOS Technology and Integrated Circuits.'. Together they form a unique fingerprint.

Cite this