Abstract
High resolution synchrotron radiation core level photoemission measurements have been used to undertake
a comparative study ofthe high temperature thermal stability ofthe ammonium sulphide passivated
InGaAs surface and the same surface following the atomic layer deposition (ALD) of an ultrathin (∼1 nm)
Al2O3 layer. The solution based ex situ sulphur passivation was found to be effective at removing a significant
amount of the native oxides and protecting the surface against re-oxidation upon air exposure. The
residual interfacial oxides which form between sulphur passivated InGaAs and the ultrathin Al2O3 layer
can be substantially removed at high temperature (up to 700 ◦C) without impacting on the InGaAs stoichiometry
while significant loss of indium was recorded at this temperature on the uncovered sulphur
passivated InGaAs surface.
Original language | English |
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Pages (from-to) | 696-700 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 317 |
Early online date | 06 Sep 2014 |
DOIs | |
Publication status | Published - 30 Oct 2014 |
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Profiles
-
David McNeill
- School of Electronics, Electrical Engineering and Computer Science - Senior Lecturer
- Wireless Communication Systems
Person: Academic