Abstract
| Language | English |
|---|---|
| Pages | 696-700 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 317 |
| Early online date | 06 Sep 2014 |
| DOIs | |
| Publication status | Published - 30 Oct 2014 |
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High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission. / Chauhan, Lalit; Gajula, Durga Rao; McNeill, David; Hughes, Greg.
In: Applied Surface Science, Vol. 317, 30.10.2014, p. 696-700.Research output: Contribution to journal › Article
TY - JOUR
T1 - High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission
AU - Chauhan, Lalit
AU - Gajula, Durga Rao
AU - McNeill, David
AU - Hughes, Greg
PY - 2014/10/30
Y1 - 2014/10/30
N2 - High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study ofthe high temperature thermal stability ofthe ammonium sulphide passivated InGaAs surface and the same surface following the atomic layer deposition (ALD) of an ultrathin (∼1 nm) Al2O3 layer. The solution based ex situ sulphur passivation was found to be effective at removing a significant amount of the native oxides and protecting the surface against re-oxidation upon air exposure. The residual interfacial oxides which form between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 ◦C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the uncovered sulphur passivated InGaAs surface.
AB - High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study ofthe high temperature thermal stability ofthe ammonium sulphide passivated InGaAs surface and the same surface following the atomic layer deposition (ALD) of an ultrathin (∼1 nm) Al2O3 layer. The solution based ex situ sulphur passivation was found to be effective at removing a significant amount of the native oxides and protecting the surface against re-oxidation upon air exposure. The residual interfacial oxides which form between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 ◦C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the uncovered sulphur passivated InGaAs surface.
U2 - 10.1016/j.apsusc.2014.08.180
DO - 10.1016/j.apsusc.2014.08.180
M3 - Article
VL - 317
SP - 696
EP - 700
JO - Applied Surface Science
T2 - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -