High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission

Lalit Chauhan, Durga Rao Gajula, David McNeill, Greg Hughes

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study ofthe high temperature thermal stability ofthe ammonium sulphide passivated InGaAs surface and the same surface following the atomic layer deposition (ALD) of an ultrathin (∼1 nm) Al2O3 layer. The solution based ex situ sulphur passivation was found to be effective at removing a significant amount of the native oxides and protecting the surface against re-oxidation upon air exposure. The residual interfacial oxides which form between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 ◦C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the uncovered sulphur passivated InGaAs surface.
Original languageEnglish
Pages (from-to)696-700
Number of pages5
JournalApplied Surface Science
Volume317
Early online date06 Sep 2014
DOIs
Publication statusPublished - 30 Oct 2014

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