Abstract
High resolution soft x-ray photoemission spectroscopy (SXPS) have been used to study the high temperature thermal stability of ultra-thin atomic layer deposited (ALD) HfO2 layers (∼1 nm) on sulphur passivated and hydrofluoric acid (HF) treated germanium surfaces. The interfacial oxides which are detected for both surface preparations following HfO2 deposition can be effectively removed by annealing upto 700 °C without any evidence of chemical interaction at the HfO2/Ge interface. The estimated valence and conduction band offsets for the HfO2/Ge abrupt interface indicated that effective barriers exist to inhibit carrier injection.
Original language | English |
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Pages (from-to) | 345-349 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 292 |
Early online date | 04 Dec 2013 |
DOIs | |
Publication status | Published - 15 Feb 2014 |