High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces

Lalit Chauhan*, Durga Rao Gajula, David McNeill, Greg Hughes

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study of the high temperature stability of ultrathin Al2O3 layers deposited by atomic layer deposition (ALD) on both sulphur passivated and native oxide covered InGaAs. The residual interfacial oxides between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 °C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the native oxide InGaAs surface.
Original languageEnglish
Pages (from-to)249-253
Number of pages5
JournalMicroelectronic Engineering
Volume147
Early online date28 Apr 2015
DOIs
Publication statusPublished - 01 Nov 2015

    Fingerprint

Keywords

  • Al<inf>2</inf>O<inf>3</inf>
  • Annealing
  • Atomic layer deposition
  • InGaAs
  • Photoemission
  • Wet sulphur passivation

Cite this