Holistic Design Strategy for High-Selectivity Low-Loss Integrated Millimetre-Wave Image-Reject Filters

Mury Thian; Vincent Fusco

doi:10.1049/iet-cds.2014.0335

Holistic Design Strategy for High-Selectivity Low-Loss Integrated Millimetre-Wave Image-Reject Filters

Mury Thian, Vincent Fusco

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Abstract

To alleviate practical limitations in the design of mm-wave on-chip image-reject filters, systematic design methodologies are presented. Three low-order filters with high-selectivity and low-loss characteristics are designed and compared. Transmission zeroes are created by means of a quarter-wave transmission line (filter 1) and a series LC resonator (filters 2 and 3). Implemented on SiGe, the filters occupy 0.125, 0.064, and 0.079 mm2 chip area including pads. The measured transmission
losses across 81-86 GHz E-Band frequency range are 3.6-5.2 dB for filter 1, 3.1-4.7 dB for filter 2 and 3.6-5 dB for filter 3 where rejection levels at the image band are greater than 30 dB.

Original language	English
Pages (from-to)	353-361
Number of pages	9
Journal	IET Circuits, Devices and Systems
Volume	9
Issue number	5
DOIs	https://doi.org/10.1049/iet-cds.2014.0335
Publication status	Published - Sept 2015

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10.1049/iet-cds.2014.0335

Holistic Design Strategy for High-Selectivity Low-Loss Integrated Millimetre-Wave Image-Reject Filters
© 2015 IET Digital Library This paper is a postprint of a paper submitted to and accepted for publication in IET Circuits, Devices and Systems and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library
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@article{1ed99f6500994fad9fb4154148fd2fd4,

title = "Holistic Design Strategy for High-Selectivity Low-Loss Integrated Millimetre-Wave Image-Reject Filters",

abstract = "To alleviate practical limitations in the design of mm-wave on-chip image-reject filters, systematic design methodologies are presented. Three low-order filters with high-selectivity and low-loss characteristics are designed and compared. Transmission zeroes are created by means of a quarter-wave transmission line (filter 1) and a series LC resonator (filters 2 and 3). Implemented on SiGe, the filters occupy 0.125, 0.064, and 0.079 mm2 chip area including pads. The measured transmissionlosses across 81-86 GHz E-Band frequency range are 3.6-5.2 dB for filter 1, 3.1-4.7 dB for filter 2 and 3.6-5 dB for filter 3 where rejection levels at the image band are greater than 30 dB. ",

author = "Mury Thian and Vincent Fusco",

year = "2015",

month = sep,

doi = "10.1049/iet-cds.2014.0335",

language = "English",

volume = "9",

pages = "353--361",

journal = "IET Circuits, Devices and Systems",

issn = "1751-858X",

publisher = "John Wiley & Sons Ltd",

number = "5",

}

TY - JOUR

T1 - Holistic Design Strategy for High-Selectivity Low-Loss Integrated Millimetre-Wave Image-Reject Filters

AU - Thian, Mury

AU - Fusco, Vincent

PY - 2015/9

Y1 - 2015/9

N2 - To alleviate practical limitations in the design of mm-wave on-chip image-reject filters, systematic design methodologies are presented. Three low-order filters with high-selectivity and low-loss characteristics are designed and compared. Transmission zeroes are created by means of a quarter-wave transmission line (filter 1) and a series LC resonator (filters 2 and 3). Implemented on SiGe, the filters occupy 0.125, 0.064, and 0.079 mm2 chip area including pads. The measured transmissionlosses across 81-86 GHz E-Band frequency range are 3.6-5.2 dB for filter 1, 3.1-4.7 dB for filter 2 and 3.6-5 dB for filter 3 where rejection levels at the image band are greater than 30 dB.

AB - To alleviate practical limitations in the design of mm-wave on-chip image-reject filters, systematic design methodologies are presented. Three low-order filters with high-selectivity and low-loss characteristics are designed and compared. Transmission zeroes are created by means of a quarter-wave transmission line (filter 1) and a series LC resonator (filters 2 and 3). Implemented on SiGe, the filters occupy 0.125, 0.064, and 0.079 mm2 chip area including pads. The measured transmissionlosses across 81-86 GHz E-Band frequency range are 3.6-5.2 dB for filter 1, 3.1-4.7 dB for filter 2 and 3.6-5 dB for filter 3 where rejection levels at the image band are greater than 30 dB.

U2 - 10.1049/iet-cds.2014.0335

DO - 10.1049/iet-cds.2014.0335

M3 - Article

SN - 1751-858X

VL - 9

SP - 353

EP - 361

JO - IET Circuits, Devices and Systems

JF - IET Circuits, Devices and Systems

IS - 5

ER -

Holistic Design Strategy for High-Selectivity Low-Loss Integrated Millimetre-Wave Image-Reject Filters

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