Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides

D. Edelberg; D. Rhodes; A. Kerelsky; B. Kim; J. Wang; A. Zangiabadi; C. Kim; A. Abhinandan; J. Ardelean; M. Scully; D. Scullion; L. Embon; I. Zhang; R. Zu; Elton J. G. Santos; L. Balicas; C. Marianetti; K. Barmak; X. -Y. Zhu; J. Hone; A. N. Pasupathy

doi:arXiv:1805.00127v1

Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides

D. Edelberg, D. Rhodes, A. Kerelsky, B. Kim, J. Wang, A. Zangiabadi, C. Kim, A. Abhinandan, J. Ardelean, M. Scully, D. Scullion, L. Embon, I. Zhang, R. Zu, Elton J. G. Santos, L. Balicas, C. Marianetti, K. Barmak, X. -Y. Zhu, J. HoneA. N. Pasupathy

Research output: Other contribution

2 Citations (Scopus)

129 Downloads (Pure)

Abstract

Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.

Original language	English
Type	Online preprint
Media of output	ArXiv preprint server
DOIs	https://doi.org/arXiv:1805.00127v1
Publication status	Published - 01 Sep 2018

Publication series

Name	arXiv:1805.00127 [cond-mat.mtrl-sci]

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arXiv:1805.00127v1

Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides
Copyright 2018 The Authors. This work is made available online in accordance with the publisher’s policies. Please refer to any applicable terms of use of the publisher.
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Edelberg, D., Rhodes, D., Kerelsky, A., Kim, B., Wang, J., Zangiabadi, A., Kim, C., Abhinandan, A., Ardelean, J., Scully, M., Scullion, D., Embon, L., Zhang, I., Zu, R., Santos, E. J. G., Balicas, L., Marianetti, C., Barmak, K., Zhu, X. -Y., ... Pasupathy, A. N. (2018, Sep 1). Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides. https://doi.org/arXiv:1805.00127v1

Edelberg, D. ; Rhodes, D. ; Kerelsky, A. ; Kim, B. ; Wang, J. ; Zangiabadi, A. ; Kim, C. ; Abhinandan, A. ; Ardelean, J. ; Scully, M. ; Scullion, D. ; Embon, L. ; Zhang, I. ; Zu, R. ; Santos, Elton J. G. ; Balicas, L. ; Marianetti, C. ; Barmak, K. ; Zhu, X. -Y. ; Hone, J. ; Pasupathy, A. N. / Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides. 2018. (arXiv:1805.00127 [cond-mat.mtrl-sci]).

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title = "Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides",

abstract = "Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.",

author = "D. Edelberg and D. Rhodes and A. Kerelsky and B. Kim and J. Wang and A. Zangiabadi and C. Kim and A. Abhinandan and J. Ardelean and M. Scully and D. Scullion and L. Embon and I. Zhang and R. Zu and Santos, {Elton J. G.} and L. Balicas and C. Marianetti and K. Barmak and Zhu, {X. -Y.} and J. Hone and Pasupathy, {A. N.}",

year = "2018",

month = sep,

day = "1",

doi = "arXiv:1805.00127v1",

language = "English",

series = "arXiv:1805.00127 [cond-mat.mtrl-sci]",

type = "Other",

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Edelberg, D, Rhodes, D, Kerelsky, A, Kim, B, Wang, J, Zangiabadi, A, Kim, C, Abhinandan, A, Ardelean, J, Scully, M, Scullion, D, Embon, L, Zhang, I, Zu, R, Santos, EJG, Balicas, L, Marianetti, C, Barmak, K, Zhu, X-Y, Hone, J & Pasupathy, AN 2018, Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides.. https://doi.org/arXiv:1805.00127v1

Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides. / Edelberg, D.; Rhodes, D.; Kerelsky, A.; Kim, B.; Wang, J.; Zangiabadi, A.; Kim, C.; Abhinandan, A.; Ardelean, J.; Scully, M.; Scullion, D.; Embon, L.; Zhang, I.; Zu, R.; Santos, Elton J. G.; Balicas, L.; Marianetti, C.; Barmak, K.; Zhu, X. -Y.; Hone, J.; Pasupathy, A. N.

2018, Online preprint. (arXiv:1805.00127 [cond-mat.mtrl-sci]).

Research output: Other contribution

TY - GEN

T1 - Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides

AU - Edelberg, D.

AU - Rhodes, D.

AU - Kerelsky, A.

AU - Kim, B.

AU - Wang, J.

AU - Zangiabadi, A.

AU - Kim, C.

AU - Abhinandan, A.

AU - Ardelean, J.

AU - Scully, M.

AU - Scullion, D.

AU - Embon, L.

AU - Zhang, I.

AU - Zu, R.

AU - Santos, Elton J. G.

AU - Balicas, L.

AU - Marianetti, C.

AU - Barmak, K.

AU - Zhu, X. -Y.

AU - Hone, J.

AU - Pasupathy, A. N.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.

AB - Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.

U2 - arXiv:1805.00127v1

DO - arXiv:1805.00127v1

M3 - Other contribution

T3 - arXiv:1805.00127 [cond-mat.mtrl-sci]

ER -