Impact of buried oxide thickness and ground plane resistivity on substrate cross-talk in Ground Plane Silicon-on-Insulator (GPSOI) cross-talk suppression technology

Mervyn Armstrong, Michael Bain, Paul Baine, Harold Gamble

Research output: Contribution to conferencePaper

Original languageEnglish
Pages84-85
Number of pages2
Publication statusPublished - Oct 2004
EventProceedings - IEEE Intl SOI Conf, Proceedings, p 84-85 - Charleston, United States
Duration: 01 Oct 200401 Oct 2004

Conference

ConferenceProceedings - IEEE Intl SOI Conf, Proceedings, p 84-85
CountryUnited States
CityCharleston
Period01/10/200401/10/2004

Cite this

Armstrong, M., Bain, M., Baine, P., & Gamble, H. (2004). Impact of buried oxide thickness and ground plane resistivity on substrate cross-talk in Ground Plane Silicon-on-Insulator (GPSOI) cross-talk suppression technology. 84-85. Paper presented at Proceedings - IEEE Intl SOI Conf, Proceedings, p 84-85, Charleston, United States.