Improving f(MAX)/f(T) ratio in FinFETs using source/drain extension region engineering

Abhinav Kranti, Alastair Armstrong

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A design methodology to optimise the ratio of maximum oscillation frequency to cutoff frequency, f(MAX)/f(T), in 60 nm FinFETs is presented. Results show that 25 to 60% improvement in f(MAX)/f(T) at drain currents of 20-300 mu A/mu m can be achieved in a non-overlap gate-source/drain architecture. The reported work provides new insights into the design and optimisation of nanoscale FinFETs for RF applications.
Original languageEnglish
Pages (from-to)825-U63
Number of pages763
JournalElectronics Letters
Volume44
DOIs
Publication statusPublished - 2008

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