Incorporating structural analysis in a quantum dot Monte-Carlo model

I. M.E. Butler*, Wei Li, S. A. Sobhani, N. Babazadeh, I. M. Ross, K. Nishi, K. Takemasa, M. Sugawara, Negin Peyvast, D. T.D. Childs, R. A. Hogg

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Abstract

We simulate the shape of the density of states (DoS) of the quantum dot (QD) ensemble based upon size information provided by high angle annular dark field scanning transmission electron microscopy (HAADF STEM). We discuss how the capability to determined the QD DoS from micro-structural data allows a MonteCarlo model to be developed to accurately describe the QD gain and spontaneous emission spectra. The QD DoS shape is then studied, with recommendations made via the effect of removing, and enhancing this size inhomogeneity on various QD based devices is explored.

Original languageEnglish
Title of host publicationNovel In-Plane Semiconductor Lasers XVII
EditorsPeter M. Smowton, Alexey A. Belyanin
PublisherSPIE
ISBN (Electronic)9781510615915
DOIs
Publication statusPublished - 19 Feb 2018
EventNovel In-Plane Semiconductor Lasers XVII 2018 - San Francisco, United States
Duration: 29 Jan 201801 Feb 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10553
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceNovel In-Plane Semiconductor Lasers XVII 2018
CountryUnited States
CitySan Francisco
Period29/01/201801/02/2018

Keywords

  • HAADF STEM
  • inhomogeneous broadening
  • Quantum Dots

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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