Insights into Gate-Underlap Design in Double Gate based 6-T SRAM Cell for Low Voltage Applications

R Rashmi, Abhinav Kranti, Alastair Armstrong

Research output: Contribution to conferencePaper

2 Citations (Scopus)
Original languageEnglish
Pages61-62
Number of pages2
Publication statusPublished - Oct 2008
EventIEEE International SOI Conference - New Platz, Ny, United States
Duration: 01 Oct 200801 Oct 2008

Conference

ConferenceIEEE International SOI Conference
CountryUnited States
CityNew Platz, Ny
Period01/10/200801/10/2008

Cite this

Rashmi, R., Kranti, A., & Armstrong, A. (2008). Insights into Gate-Underlap Design in Double Gate based 6-T SRAM Cell for Low Voltage Applications. 61-62. Paper presented at IEEE International SOI Conference, New Platz, Ny, United States.