Insights into Gate-Underlap Design in Double Gate based 6-T SRAM Cell for Low Voltage Applications

R Rashmi, Abhinav Kranti, Alastair Armstrong

Research output: Contribution to conference › Paper

Original language	English
Pages	61-62
Number of pages	2
Publication status	Published - Oct 2008
Event	IEEE International SOI Conference - New Platz, Ny, United States Duration: 01 Oct 2008 → 01 Oct 2008

Conference	IEEE International SOI Conference
Country/Territory	United States
City	New Platz, Ny
Period	01/10/2008 → 01/10/2008

Cite this

@conference{60a5b20e2721457eb1641cd38bfcae3e,

title = "Insights into Gate-Underlap Design in Double Gate based 6-T SRAM Cell for Low Voltage Applications",

author = "R Rashmi and Abhinav Kranti and Alastair Armstrong",

year = "2008",

month = oct,

language = "English",

pages = "61--62",

note = "IEEE International SOI Conference ; Conference date: 01-10-2008 Through 01-10-2008",

}