Interface mediated resistive switching in epitaxial NiO nanostructures

J. Sullafen, K. Bogle, X. Cheng, Marty Gregg, N. Valanoor

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53 Citations (Scopus)

Abstract

We report on the non-volatile resistive switching properties of epitaxial nickel oxide (NiO) nanostructures, 10-100 nm wide and up to 30 nm high grown on (001)-Nb:SrTiO3 substrates. Conducting-atomic force microscopy on individual nano-islands confirms prominent bipolar switching with a maximum ON/OFF ratio of similar to 10(3) at a read voltage of similar to+0.4V. This ratio is found to decrease with increasing height of the nanostructure. Linear fittings of I-V loops reveal that low and high resistance states follow Ohmic-conduction and Schottky-emission mechanism, respectively. The switching behavior (dependence on height) is attributed to the modulation of the carrier density at the nanostructure-substrate interface due to the applied electric field.
Original languageEnglish
Article number203115
Pages (from-to)203115-203115
Number of pages1
JournalApplied Physics Letters
Volume100
Issue number20
DOIs
Publication statusPublished - 14 May 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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