Large-signal modeling of frequency-dispersion effects in submicron MOSFET devices

B. Toner, V. F. Fusco

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In this Letter a large-signal model for the MOSFET will be presented, along with the parameter extraction for the model using large-signal time-domain waveforms. The dc/ac hybrid model described accounts for the discrepancy between dc and large-signal rf extracted equivalent circuit conductance and transconductance parameters. In addition, the dynamic nature of the modeling process directly characterizes other phenomena associated with high-power operation such as self-heating effects. Full verification of the model is provided for an 80 mum/0.18 mum MOSFET. An improvement in the performance of the model over traditional quasi-static models at rf whilst maintaining the accuracy of the dc model is demonstrated.
Original languageEnglish
Pages (from-to)429-432
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume34
Issue number6
DOIs
Publication statusPublished - 20 Sept 2002

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