Abstract
In this Letter a large-signal model for the MOSFET will be presented, along with the parameter extraction for the model using large-signal time-domain waveforms. The dc/ac hybrid model described accounts for the discrepancy between dc and large-signal rf extracted equivalent circuit conductance and transconductance parameters. In addition, the dynamic nature of the modeling process directly characterizes other phenomena associated with high-power operation such as self-heating effects. Full verification of the model is provided for an 80 mum/0.18 mum MOSFET. An improvement in the performance of the model over traditional quasi-static models at rf whilst maintaining the accuracy of the dc model is demonstrated.
Original language | English |
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Pages (from-to) | 429-432 |
Number of pages | 4 |
Journal | Microwave and Optical Technology Letters |
Volume | 34 |
Issue number | 6 |
DOIs | |
Publication status | Published - 20 Sept 2002 |